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- Buyanova, Irina, 1960-, et al.
(författare)
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Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
- 2004
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 22:6, s. 2668-2672
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Tidskriftsartikel (refereegranskat)abstract
- The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.
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| 3. |
- Brosselard, P., et al.
(författare)
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3.3 kV-10A 4H-SiC PiN diodes
- 2009
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Ingår i: Materials Science Forum, Vols. 600-603. - : Trans Tech Publ.. ; , s. 991-994
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Konferensbidrag (refereegranskat)abstract
- An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The processed PiN diodes have been characterized in forward and reverse mode at different temperature. The larger diodes (2.56 mm2) have a very low leakage current around 20 nA @ 500V for temperatures up to 300°C. A performant yield (68%) was obtained on these larger diodes have a breakdown voltage superior to 500V. Electroluminescence characteristics have been done on these devices and they show that there is no generation of Stacking Faults during the bipolar conduction.
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| 4. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Mechanism for radiative recombination in ZnCdO alloys
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:26
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Tidskriftsartikel (refereegranskat)abstract
- Temperature dependent cw- and time-resolved photoluminescence combined with absorption measurements are employed to evaluate the origin of radiative recombination in ZnCdO alloys grown by molecular-beam epitaxy. The near-band-edge emission is attributed to recombination of excitons localized within band tail states likely caused by nonuniformity in Cd distribution. Energy transfer between the tail states is argued to occur via tunneling of localized excitons. The transfer is shown to be facilitated by increasing Cd content due to a reduction of the exciton binding energy and, therefore, an increase of the exciton Bohr radius in the alloys with a high Cd content. © 2007 American Institute of Physics.
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| 9. |
- Choubina, Tatiana, 1950-, et al.
(författare)
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Slow light in GaN
- 2008
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Ingår i: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008. ; , s. 257-
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Konferensbidrag (refereegranskat)
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| 10. |
- Choubina, Tatiana, 1950-, et al.
(författare)
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The slow light in GaN
- 2008
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Ingår i: ICPS2008,2008. ; , s. 647-
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Konferensbidrag (refereegranskat)
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