| 1. |
- Callaway, EM, et al.
(author)
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A multimodal cell census and atlas of the mammalian primary motor cortex
- 2021
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In: Nature. - : Springer Science and Business Media LLC. - 1476-4687 .- 0028-0836. ; 598:7879, s. 86-102
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Journal article (peer-reviewed)abstract
- Here we report the generation of a multimodal cell census and atlas of the mammalian primary motor cortex as the initial product of the BRAIN Initiative Cell Census Network (BICCN). This was achieved by coordinated large-scale analyses of single-cell transcriptomes, chromatin accessibility, DNA methylomes, spatially resolved single-cell transcriptomes, morphological and electrophysiological properties and cellular resolution input–output mapping, integrated through cross-modal computational analysis. Our results advance the collective knowledge and understanding of brain cell-type organization1–5. First, our study reveals a unified molecular genetic landscape of cortical cell types that integrates their transcriptome, open chromatin and DNA methylation maps. Second, cross-species analysis achieves a consensus taxonomy of transcriptomic types and their hierarchical organization that is conserved from mouse to marmoset and human. Third, in situ single-cell transcriptomics provides a spatially resolved cell-type atlas of the motor cortex. Fourth, cross-modal analysis provides compelling evidence for the transcriptomic, epigenomic and gene regulatory basis of neuronal phenotypes such as their physiological and anatomical properties, demonstrating the biological validity and genomic underpinning of neuron types. We further present an extensive genetic toolset for targeting glutamatergic neuron types towards linking their molecular and developmental identity to their circuit function. Together, our results establish a unifying and mechanistic framework of neuronal cell-type organization that integrates multi-layered molecular genetic and spatial information with multi-faceted phenotypic properties.
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| 2. |
- Abermann, S., et al.
(author)
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Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics for CMOS technology
- 2007
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In: Physics of Semiconductors, Pts A and B. - : AIP. - 9780735403970 ; , s. 293-294
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Conference paper (peer-reviewed)abstract
- We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-kappa dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.
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| 3. |
- Abermann, S., et al.
(author)
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Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
- 2007
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In: Microelectronics and reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 47:4-5, s. 536-539
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Journal article (peer-reviewed)abstract
- In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TIN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 degrees C or 950 degrees C show thermodynamic instability and related undesirable high leakage currents.
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| 4. |
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| 5. |
- Abermann, S., et al.
(author)
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Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
- 2007
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:5-8, s. 1635-1638
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Journal article (peer-reviewed)abstract
- We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.
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| 6. |
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| 7. |
- Abermann, S., et al.
(author)
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Processing and evaluation of metal gate/high-kappa/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-kappa dielectric
- 2007
-
In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:5-8, s. 1635-1638
-
Journal article (peer-reviewed)abstract
- We evaluate various metal gate/high-K/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.
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| 8. |
- Bethge, O., et al.
(author)
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Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
- 2014
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 116:21, s. 214111-
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Journal article (peer-reviewed)abstract
- The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl) yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 x 10(11) eV(-1) cm(-2) were achieved by oxygen annealing at high temperatures (550 degrees C-600 degrees C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.
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| 9. |
- Bethge, O., et al.
(author)
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Fabrication of highly ordered nanopillar arrays and defined etching of ALD-grown all-around platinum films
- 2012
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In: Journal of Micromechanics and Microengineering. - : IOP Publishing. - 0960-1317 .- 1361-6439. ; 22:8, s. 085013-
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Journal article (peer-reviewed)abstract
- Highly ordered arrays of silicon nanopillars are etched by means of induced-coupled-plasma reactive-ion etching (RIE). The sulfur hexafluoride/oxygen (SF6/O-2)-based cryogenic process allows etching of nanopillars with an aspect ratio higher than 20:1 and diameters down to 30 nm. Diameters can be further reduced by a well-controllable oxidation process in O-2-ambient and a subsequent etching in hydrofluoric acid. This approach effectively removes surface contaminations induced by former RIE, as shown by x-ray photoelectron spectroscopy. Atomic layer deposition (ALD) is used to establish an all-around Al2O3/Pt stack onto the vertically aligned nanorods. Two approaches are successfully applied to remove the resistant Pt coating from the nanopillar tips.
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| 10. |
- Chow, Joe. H., et al.
(author)
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Preliminary synchronized phasor data analysis of disturbance events in the US Eastern Interconnection
- 2009
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In: Power Systems Conference and Exposition, 2009. PSCE ’09. IEEE/PES. - : IEEE. - 9781424438105 ; , s. 136-143
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Conference paper (peer-reviewed)abstract
- This paper presents analysis results of synchronized phasor data from 10 disturbance events recorded in the US Eastern Interconnection (EI). The phasor data covers a wide region in the EI, allowing for the study of disturbance propagation, interarea modes, and oscillations in voltages and currents. The analysis is not straightforward because the EI is a meshed system with adequate interarea mode damping. Disturbances involving tripping a single large generator unit produce very short interarea swing responses. Islanding events involving regions at the perimeter, however, provide more prominent responses for analysis.
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