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- Gavagnin, Marco, et al.
(författare)
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Free-Standing Magnetic Nanopillars for 3D Nanomagnet Logic
- 2014
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Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 6:22, s. 20254-20260
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Tidskriftsartikel (refereegranskat)abstract
- Nanomagnet logic (NML) is a relatively new computation technology that uses arrays of shape-controlled nanomagnets to enable digital processing. Currently, conventional resist-based lithographic processes limit the design of NML circuitry to planar nanostructures with homogeneous thicknesses. Here, we demonstrate the focused electron beam induced deposition of Fe-based nanomaterial for magnetic in-plane nanowires and out-of-plane nanopillars. Three-dimensional (3D) NML was achieved based on the magnetic coupling between nanowires and nanopillars in a 3D array. Additionally, the same Fe-based nanomaterial was used to produce tilt-corrected high-aspect-ratio probes for the accurate magnetic force microscopy (MFM) analysis of the fabricated 3D NML gate arrays. The interpretation of the MFM measurements was supported by magnetic simulations using the Object Oriented MicroMagnetic Framework. Introducing vertical out-of-plane nanopillars not only increases the packing density of 3D NML but also introduces an extra magnetic degree of freedom, offering a new approach to input/output and processing functionalities in nanomagnetic computing.
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| 3. |
- Gavagnin, Marco, et al.
(författare)
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Magnetic force microscopy study of shape engineered FEBID iron nanostructures
- 2014
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 211:2, s. 368-374
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Tidskriftsartikel (refereegranskat)abstract
- The capability to control matter down to the nanoscale level in combination with the novel magnetic properties of nanomaterials have attracted increasing attention in the last few decades due to their applications in magnetic sensing, hard disc data storage and logic devices. Therefore, many efforts have been devoted to the implementation of both nanofabrication methods as well as characterization of magnetic nanoelements. In this study, Fe-based nanostructures have been synthesized on Si(100) by focused electron beam induced deposition (FEBID) utilizing iron pentacarbonyl as precursor. The so obtained nanostructures exhibit a remarkably high iron content (Fe>80at.%), expected to give rise to a ferromagnetic behaviour. For that reason, magnetic force microscopy (MFM) analyses were performed on the obtained FEBID Fe nanostructures. Moreover, object oriented micromagnetic framework (OOMMF) magnetic simulations have been executed to study the influence of the geometry on the magnetic properties of iron single-domain nanowires. FEBID is a mask-less nanofabrication method based on the injection of precursor gas molecules in proximity of the deposition area where their decomposition is locally induced by a focused electron beam.
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| 4. |
- Henkel, Christoph, et al.
(författare)
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Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks
- 2012
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 74, s. 7-12
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Tidskriftsartikel (refereegranskat)abstract
- The paper addresses the passivation of Germanium surfaces by using layered La2O3/ZrO2 high-k dielectrics deposited by Atomic Layer Deposition to be applied in Ge-based MOSFET devices. Improved electrical properties of these multilayered gate stacks exposed to oxidizing and reducing ambient during thermal post treatment in presence of thin Pt cap layers are demonstrated. The results suggest the formation of thin intermixed LaxGeyOz interfacial layers with thicknesses controllable by oxidation time. This formation is further investigated by XPS, EDX/EELS and TEM analysis. An additional reduction annealing treatment further improves the electrical properties of the gate dielectrics in contact with the Ge substrate. As a result low interface trap densities on (100) Ge down to 3 x 10(11) eV(-1) cm(-2) are demonstrated. The formation of the high-k LaxGeyOz, layer is in agreement with the oxide densification theory and may explain the improved interface trap densities. The scaling potential of the respective layered gate dielectrics used in Ge-based MOS-based device structures to EOT of 1.2 nm or below is discussed. A trade-off between improved interface trap density and a lowered equivalent oxide thickness is found.
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