| 1. |
- Glasbey, JC, et al.
(författare)
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- 2021
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swepub:Mat__t
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| 2. |
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| 3. |
- Marlevi, David, et al.
(författare)
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Estimation of Cardiovascular Relative Pressure Using Virtual Work-Energy
- 2019
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Ingår i: Scientific Reports. - : Nature Publishing Group. - 2045-2322. ; 9:1
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Tidskriftsartikel (refereegranskat)abstract
- Many cardiovascular diseases lead to local increases in relative pressure, reflecting the higher costs of driving blood flow. The utility of this biomarker for stratifying the severity of disease has thus driven the development of methods to measure these relative pressures. While intravascular catheterisation remains the most direct measure, its invasiveness limits clinical application in many instances. Non-invasive Doppler ultrasound estimates have partially addressed this gap; however only provide relative pressure estimates for a range of constricted cardiovascular conditions. Here we introduce a non-invasive method that enables arbitrary interrogation of relative pressures throughout an imaged vascular structure, leveraging modern phase contrast magnetic resonance imaging, the virtual work-energy equations, and a virtual field to provide robust and accurate estimates. The versatility and accuracy of the method is verified in a set of complex patient-specific cardiovascular models, where relative pressures into previously inaccessible flow regions are assessed. The method is further validated within a cohort of congenital heart disease patients, providing a novel tool for probing relative pressures in-vivo.
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| 4. |
- Khelidj, H., et al.
(författare)
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Ge(Sn) growth on Si(001) by magnetron sputtering
- 2021
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Ingår i: Materials Today Communications. - : Elsevier Ltd. - 2352-4928. ; 26
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Tidskriftsartikel (refereegranskat)abstract
- The semi-conductor Ge1―xSnx exhibits interesting properties for optoelectronic applications. In particular, Ge1―xSnx alloys with x ≥ 0.1 exhibit a direct band-gap, and integrated in complementary-metal-oxide-semiconductor (CMOS) technology, should allow the development of Si photonics. CMOS-compatible magnetron sputtering deposition was shown to produce monocrystalline Ge1―xSnx films with good electrical properties at low cost. However, these layers were grown at low temperature (< 430 K) and contained less than 6 % of Sn. In this work, Ge1―xSnx thin films were elaborated at higher temperature (> 600 K) on Si(001) by magnetron sputtering in order to produce low-cost and CMOS-compatible relaxed pseudo-coherent layers with x ≥ 0.1 exhibiting a better crystallinity. Ge1―xSnx crystallization and Ge1―xSnx crystal growth were investigated. Crystallization of an amorphous Ge1―xSnx layer deposited on Si(001) or Ge(001) grown on Si(001) leads to the growth of polycrystalline films. Furthermore, the competition between Ge/Sn phase separation and Ge1―xSnx growth prevents the formation of large-grain Sn-rich Ge1―xSnx layers without the formation of β-Sn islands on the layer surface, due to significant atomic redistribution kinetics at the crystallization temperature (T = 733 K for x = 0.17). However, the growth at T = 633 K of a highly-relaxed pseudo-coherent Ge0.9Sn0.1 film with low impurity concentrations (< 2 × 1019 at cm―3) and an electrical resistivity four orders of magnitude smaller than undoped Ge is demonstrated. Consequently, magnetron sputtering appears as an interesting technique for the integration of optoelectronic and photonic devices based on Ge1―xSnx layers in the CMOS technology.
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| 5. |
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| 6. |
- Luo, T., et al.
(författare)
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Combined effect of Pt and Walloying elements on Ni-silicide formation
- 2018
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 123:12
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Tidskriftsartikel (refereegranskat)abstract
- A combinatorial study of the combined effect of Pt and W on Ni silicide formation is performed. Ni(Pt, W) films with thickness and composition gradients were prepared by a co-deposition composition spread technique using sputtering deposition from Pt, W, and Ni targets. The deposited Ni(Pt, W) films were characterized by X-ray diffraction, X-ray reflectivity, Rutherford backscattering, and atom probe tomography. The maximum content of alloying elements is close to 27 at. %. Simulations of the thickness and composition were carried out and compared with experimental results. In situ X-ray diffraction and atom probe tomography were used to study the phase formation. Both additive alloying elements (Pt + W) slow down the Ni consumption and the effect of W is more pronounced than the one of Pt. Regarding the effect of alloying elements on Ni silicides formation, three regions could be distinguished in the Ni(Pt, W)/Si wafer. For the region close to the Ni target, the low contents of alloying elements (Pt + W) have little impact on the phase sequence (delta-Ni2Si is the first silicide and NiSi forms when Ni is entirely consumed) but the kinetics of silicide formation slows down. The region close to the Pt target has high contents of (Pt + W) and is rich in Pt and a simultaneous phase formation of delta-Ni(2)Sii and NiSi is observed. For the high (PtthornW) contents and W-rich region, NiSi forms unexpectedly before delta-Ni2Si and the subsequent growth of delta-Ni2Si is accompanied by the NiSi consumption. When Ni is entirely consumed, NiSi regrows at the expense of delta-Ni2Si.
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