| 1. |
- Anastasopoulos, M., et al.
(författare)
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Multi-Grid detector for neutron spectroscopy : Results obtained on time-of-flight spectrometer CNCS
- 2017
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Ingår i: Journal of Instrumentation. - : IOP PUBLISHING LTD. - 1748-0221 .- 1748-0221. ; 12:4
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Tidskriftsartikel (refereegranskat)abstract
- The Multi-Grid detector technology has evolved from the proof-of-principle and characterisation stages. Here we report on the performance of the Multi-Grid detector, the MG.CNCS prototype, which has been installed and tested at the Cold Neutron Chopper Spectrometer, CNCS at SNS. This has allowed a side-by-side comparison to the performance of 3He detectors on an operational instrument. The demonstrator has an active area of 0.2 m2. It is specifically tailored to the specifications of CNCS. The detector was installed in June 2016 and has operated since then, collecting neutron scattering data in parallel to the He-3 detectors of CNCS. In this paper, we present a comprehensive analysis of this data, in particular on instrument energy resolution, rate capability, background and relative efficiency. Stability, gamma-ray and fast neutron sensitivity have also been investigated. The effect of scattering in the detector components has been measured and provides input to comparison for Monte Carlo simulations. All data is presented in comparison to that measured by the 3He detectors simultaneously, showing that all features recorded by one detector are also recorded by the other. The energy resolution matches closely. We find that the Multi-Grid is able to match the data collected by 3He, and see an indication of a considerable advantage in the count rate capability. Based on these results, we are confident that the Multi-Grid detector will be capable of producing high quality scientific data on chopper spectrometers utilising the unprecedented neutron flux of the ESS.
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| 2. |
- Andersen, Ken, et al.
(författare)
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B-10 multi-grid proportional gas counters for large area thermal neutron detectors
- 2013
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002 .- 1872-9576. ; 720, s. 116-121
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Tidskriftsartikel (refereegranskat)abstract
- He-3 was a popular material in neutrons detectors until its availability dropped drastically in 2008. The development of techniques based on alternative convertors is now of high priority for neutron research institutes. Thin films of B-10 or (B4C)-B-10 have been used in gas proportional counters to detect neutrons, but until now, only for small or medium sensitive area. We present here the multi-grid design, introduced at the ILL and developed in collaboration with ESS for LAN (large area neutron) detectors. Typically thirty (B4C)-B-10 films of 1 mu m thickness are used to convert neutrons into ionizing particles which are subsequently detected in a proportional gas counter. The principle and the fabrication of the multi-grid are described and some preliminary results obtained with a prototype of 200 cm x 8 cm are reported; a detection efficiency of 48% has been measured at 2.5 angstrom with a monochromatic neutron beam line, showing the good potential of this new technique. (C) 2013 Elsevier B.V. All rights reserved.
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| 3. |
- Ben Sedrine, Nabiha, et al.
(författare)
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Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 less than= x less than= 0.22)
- 2015
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Ingår i: Journal of Physics D. - : IOP PUBLISHING LTD. - 0022-3727 .- 1361-6463. ; 48:41, s. 415102-
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Tidskriftsartikel (refereegranskat)abstract
- YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 less than= x less than= 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E-1(TO) and LO, and the Raman active E-2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E-1(TO), E-2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, epsilon(infinity), the static dielectric constant, epsilon(0), and the Born effective charge Z(B) are established and discussed.
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| 4. |
- Eklund, Per, et al.
(författare)
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Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
- 2005
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 23:6, s. 2486-2495
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Tidskriftsartikel (refereegranskat)abstract
- We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300 °C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290 GPa, respectively. The electrical resistivity was 330 µ cm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material. These films' electrical-contact resistance against Ag was remarkably low, 6 µ at a contact force of 800 N compared to 3.2 µ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.
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| 5. |
- Hsiao, Ching-Lien, et al.
(författare)
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Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates
- 2012
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 524, s. 113-120
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Tidskriftsartikel (refereegranskat)abstract
- Al1-xInxN heteroepitaxial layers covering the full composition range have been realized by magnetron sputter epitaxy on basal-plane AlN, GaN, and ZnO templates at room temperature (RT). Both Al1-xInxN single layers and multilayers grown on these isostructural templates show single phase, single crystal wurtzite structure. Even at large lattice mismatch between the film and the template, for instance InN/AlN (similar to 13% mismatch), heteroepitaxy is achieved. However, RT-grown Al1-xInxN films directly deposited on non-isostructural c-plane sapphire substrate exhibit a polycrystalline structure for all compositions, suggesting that substrate surface structure is important for guiding the initial nucleation. Degradation of Al1-xInxN structural quality with increasing indium content is attributed to the formation of more point-and structural defects. The defects result in a prominent hydrostatic tensile stress component, in addition to the biaxial stress component introduced by lattice mismatch, in all RT-grown Al1-xInxN films. These effects are reflected in the measured in-plane and out-of-plane strains. The effect of hydrostatic stress is negligible compared to the effects of lattice mismatch in high-temperature grown AlN layers thanks to their low amount of defects. We found that Vegards rule is applicable to determine x in the RT-grown Al1-xInxN epilayers if the lattice constants of RT-sputtered AlN and InN films are used instead of those of the strain-free bulk materials.
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| 6. |
- Högberg, Hans, 1968-, et al.
(författare)
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Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering
- 2005
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Ingår i: Journal of Materials Research. - 0884-2914 .- 2044-5326. ; 20:4, s. 779-782
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Tidskriftsartikel (refereegranskat)abstract
- We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 °C using direct current magnetron sputtering. X-ray diffraction shows that Ti–Ge–C MAX-phases require higher deposition temperatures in a narrower window than their Ti–Si–C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young’s modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50–200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.
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| 7. |
- Höglund, Carina, et al.
(författare)
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B4C thin films for neutron detection
- 2012
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111:10
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Tidskriftsartikel (refereegranskat)abstract
- Due to the very limited availability of He-3, new kinds of neutron detectors, not based on 3He, are urgently needed. Here, we present a method to produce thin films of (B4C)-B-10, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B4C thin Films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from (B4C)-B-nat and (B4C)-B-10 targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 angstrom/s and substrate temperature of 400 degrees C result in films with a density close to bulk values and good adhesion to film thickness above 3 mu m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m(2) of 1 mu m thick (B4C)-B-10 thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total similar to 1000 m(2) of two-side coated Al-blades with similar to 1 mu m thick (B4C)-B-10 films.
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| 8. |
- Höglund, Carina, et al.
(författare)
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Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:22, s. 224101-
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Tidskriftsartikel (refereegranskat)abstract
- Thin solid films of metastable rocksalt structure (c-) Sc1-xAlxN and Ti1-xAlxN were employed as model systems to investigate the relative influence of volume mismatch and electronic structure driving forces for phase separation. Reactive dual magnetron sputtering was used to deposit stoichiometric Sc0.57Al0.43N(111) and Ti0.51Al0.49N(111) thin films, at 675 °C and 600 °C, respectively, followed by stepwise annealing to a maximum temperature of 1100 °C. Phase transformations during growth and annealing were followed in situ using X-ray scattering. The results show that the as-deposited Sc0.57Al0.43N films phase separate at 1000 °C – 1100 °C into non-isostructural c-ScN and wurtzite-structure (w-) AlN, via nucleation and growth at domain boundaries. Ti0.51Al0.49N, however, exhibits spinodal decomposition into isostructural coherent c-TiN and c-AlN, in the temperature interval of 800 °C – 1000 °C. X-ray pole figures show the coherency between c-ScN and w-AlN, with AlN(0001) || ScN(001) and AlN<01ɸ10> || ScN<1ɸ10>. First principles calculations of mixing energy-lattice spacing curves explain the results on a fundamental physics level and open a route for design of novel metastable pseudobinary phases for hard coatings and electronic materials.
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| 9. |
- Höglund, Carina, et al.
(författare)
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Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films
- 2015
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 117:19
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Tidskriftsartikel (refereegranskat)abstract
- We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C.
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| 10. |
- Höglund, Carina, et al.
(författare)
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Stability of (B4C)-B-10 thin films under neutron radiation
- 2015
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Ingår i: Radiation Physics and Chemistry. - : Elsevier BV. - 0969-806X .- 1879-0895. ; 113, s. 14-19
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of (B4C)-B-10 have shown to be very suitable as neutron-converting material in the next generation of neutron detectors, replacing the previous predominantly used He-3. In this contribution we show under realistic conditions that (B4C)-B-10 films are not damaged by the neutron irradiation and interactions, which they will be exposed to under many years in a neutron detector. 1 mu m thick (B4C)-B-10 thin films were deposited onto Al or Si substrates using dc magnetron sputtering. As-deposited films were exposed to a cold neutron beam with fluences of up to 1.1 x 10(14) cm(-2) and a mean wavelength of 6.9 angstrom. Both irradiated and as-deposited reference samples were characterized with time-of-flight elastic recoil detection analysis, scanning electron microscopy, transmission electron microscopy, X-ray photoemission spectroscopy, and X-ray diffraction. We show that only 1.8 ppm of the B-10 atoms were consumed and that the film composition does not change by the neutron interaction within the measurement accuracy. The irradiation does not deteriorate the film adhesion and there is no indication that it results in increased residual stress values of the as-deposited films of 0.095 GPa. From what is visible with the naked eye and down to atomic level studies, no change from the irradiation could be found using the above-mentioned characterization techniques. (C) 2015 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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