SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "WFRF:(Bleichner G) "

Search: WFRF:(Bleichner G)

  • Result 1-5 of 5
Sort/group result
   
EnumerationReferenceCoverFind
1.
  •  
2.
  •  
3.
  • Doyle, J P, et al. (author)
  • Observation of near-surface electrically active defects in n-type 6H-SiC
  • 1998
  • In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 83, s. 3649-3651
  • Journal article (peer-reviewed)abstract
    • In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].
  •  
4.
  • Janson, M. S., et al. (author)
  • Transient enhanced diffusion of implanted boron in 4H-silicon carbide
  • 2000
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76:11, s. 1434-1436
  • Journal article (peer-reviewed)abstract
    • Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several mu m into the samples when annealed at 1600 and 1700 degrees C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 degrees C is determined to 7x10(-12) cm(2)/s, which is 160 times larger than the equilibrium B diffusivity given in the literature.
  •  
5.
  • Linnarsson, Margareta K., et al. (author)
  • Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
  • 2001
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:13, s. 2016-2018
  • Journal article (peer-reviewed)abstract
    • Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 degreesC and 2000 degreesC for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of similar to 2x10(20) Al/cm(3) (1900 degreesC) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700 degreesC or above when the Al concentration exceeds 2x10(20) cm(-3). Al-containing precipitates are identified by energy-filtered TEM.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-5 of 5

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view