| 1. |
- Bruzzi, M, et al.
(författare)
-
Radiation-hard semiconductor detectors for SuperLHC
- 2005
-
Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
-
Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
|
|
| 2. |
- Blumenau, A.T., et al.
(författare)
-
The effect of charge on kink migration at 90° partial dislocations in SiC
- 2005
-
Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 202:5, s. 877-882
-
Tidskriftsartikel (refereegranskat)abstract
- SiC bipolar devices show a degradation under forward-biased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC using the density functional based codes DFTB and AIMPRO. After in earlier theoretical work we reported on the structure, energetics and electronic activity of both of the Shockley partials, and on the formation and migration barriers of kinks, in this work we present first results on the effect of charge on the disloction kinks. The calculations give insights into the device degradation mechanism.
|
|
| 3. |
- Goss, J.P., et al.
(författare)
-
Planar interstitial aggregates in Si
- 2002
-
Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 14:48, s. 12843-12853
-
Tidskriftsartikel (refereegranskat)abstract
- Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.
|
|
| 4. |
- Eberlein, T.A.G., et al.
(författare)
-
Effect of charge on the movement of dislocations in SiC
- 2006
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:8, s. 82113-
-
Tidskriftsartikel (refereegranskat)abstract
- SiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC. In this work we present results on the effect of charge on the dislocation kinks. The calculations show that silicon kinks have a deep filled band above the valence band and the trapping of holes into this band permits motion at room temperature.
|
|
| 5. |
- Eberlein, T.A.G., et al.
(författare)
-
Movement and pinning of dislocations in SiC
- 2007
-
Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 4:8, s. 2923-2928
-
Tidskriftsartikel (refereegranskat)abstract
- SiC bipolar devices show a degradation under forward-biased operation due to the formation and rapid propagation of stacking faults in the active region of the device. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations having either Si or C core atoms. We investigated the effect of charge on the dislocation kinks and found that only silicon kinks have a deep filled band above the valence band. Trapping of holes into this band permits dislocation glide at room temperature. This mechanism is distinct from REDG as it requires only holes to be trapped at a Si partial and not in addition electrons in stacking fault states. We furthermore looked at the pinning of dislocations by nitrogen and boron and found a strong pinning of the C core by N and of the Si core by B.
|
|
| 6. |
- Goss, J.P., et al.
(författare)
-
Electrical and optical properties of rod-like defects in silicon
- 2004
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:20, s. 4633-4635
-
Tidskriftsartikel (refereegranskat)abstract
- Self-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more stable than {111} RLDs but this reverses for larger defects. We attribute the electrical activity of {113} RLDs found in deep level transient spectroscopy studies with the bounding dislocations and the 0.903 eV photoluminescence to vacancy point defects lying on the habit plane.
|
|
| 7. |
- Blumenau, A.T., et al.
(författare)
-
Basal plane partial dislocations in silicon carbide
- 2003
-
Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 340, s. 160-164
-
Tidskriftsartikel (refereegranskat)abstract
- Under operating conditions (forward bias) bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal plane. It has been suggested that a recombination-enhanced dislocation glide (REDG) mechanism allows the bordering Shockley partial dislocations to overcome their barrier to glide motion and thus results in the observed stacking fault growth. In this work, we investigate the structure and properties of the participating Shockley partials by means of density functional-based atomistic calculations. Their glide motion is modelled in a process involving the formation and subsequent migration of kinks. This in combination with an analysis of the electronic structure of the partials allows an identification of those types which will be affected by the REDG mechanism.
|
|
| 8. |
- Blumenau, A.T., et al.
(författare)
-
Density functional based modelling of 30° partial dislocations in SiC
- 2004
-
Ingår i: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003. - Stafa-Zuerich : Trans Tech Publications Inc.. - 0878499431 ; , s. 453-456
-
Konferensbidrag (refereegranskat)abstract
- Experiment has shown that 4H- and 6H-SiC pin diodes degrade rapidly during forward biased operation. This degradation is accompanied by the formation and expansion of stacking faults in the basal plane. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations. In our work we investigate the structure and properties of basal plane 30° Shockley partials in SiC by means of density functional based calculations. Barriers to their glide motion, and thus the expansion of the accompanying stacking fault is modelled in a process involving the formation and subsequent migration of kinks in the dislocation. In combination with an analysis of the electronic structure of the partials and stacking faults, this allows an identification of those types of partials which will be affected by the REDG mechanism in this model.
|
|
| 9. |
- Blumenau, A. T., et al.
(författare)
-
Dislocation related photoluminescence in silicon
- 2001
-
Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 87:18
-
Tidskriftsartikel (refereegranskat)abstract
- Dislocation related photoluminescence in Si and SiGe is attributed to stable interstitial clusters bound to 60° dislocations. Density functional based total energy calculations in Si give binding energies between 1.5 and 3.6 eV for I3 and I4 clusters with 90° and 30° partials. They possess donor levels around Ev+0.4 eV which are consistent with deep level transient spectroscopic studies on p-Si. It is further suggested that the clusters would act as the obstacles to the movement of dislocations which may have been observed in recent transmission electron microscopy studies.
|
|
| 10. |
- Blumenau, A.T., et al.
(författare)
-
Dislocations in hexagonal and cubic GaN
- 2000
-
Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 12, s. 10223-10233
-
Tidskriftsartikel (refereegranskat)abstract
- The structure and electronic activity of several types of dislocations in both hexagonal and cubic GaN are calculated using first-principles methods. Most of the stoichiometric dislocations investigated in hexagonal GaN do not induce deep acceptor states and thus cannot be responsible for the yellow luminescence. However, it is shown that electrically active point defects, in particular gallium vacancies and oxygen-related defect complexes, can be trapped at the stress field of the dislocations and may be responsible for this luminescence. For cubic GaN, we find the ideal stoichiometric 60° dislocation to be electrically active and the glide set to be more stable than the shuffle. The dissociation of the latter is considered
|
|
