| 1. |
- Plaven-Sigray, Pontus, et al.
(författare)
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Dopamine D1 receptor availability is related to social behavior : A positron emission tomography study
- 2014
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Ingår i: NeuroImage. - : Elsevier BV. - 1053-8119 .- 1095-9572. ; 102, s. 590-595
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Tidskriftsartikel (refereegranskat)abstract
- Dysfunctional interpersonal behavior is thought to underlie a wide spectrum of psychiatric disorders; however, the neurobiological underpinnings of these behavioral disturbances are poorly understood. Previous molecular imaging studies have shown associations between striatal dopamine (DA) D2-receptor binding and interpersonal traits, such as social conformity. The objective of this study was to explore, for the first time, the role of DA D1-receptors (D1-Rs) in human interpersonal behavior. Twenty-three healthy subjects were examined using positron emission tomography and the radioligand [C-11] SCH23390, yielding D1-R binding potential values. Striatal D1-R binding was related to personality scales selected to specifically assess one dimension of interpersonal behavior, namely a combination of affiliation and dominance (i.e., the Social Desirability, Verbal Trait Aggression and Physical Trait Aggression scales from Swedish Universities Scales of Personality). An exploratory analysis was also performed for extrastriatal brain regions. D1-R binding potential values in the limbic striatum(r= .52; p= .015), associative striatum(r= .55; p= .009), and sensorimotor striatum(r= .67; p= .001) were positively related to Social Desirability scores. D1-R binding potential in the limbic striatum (r= -.51; p = .019) was negatively associated with Physical Trait Aggression scores. For extrastriatal regions, Social Desirability scores showed positive correlations in the amygdala (r = .60; p = .006) and medial frontal cortex (r= .60; p = .004). This study provides further support for the role of DA function in the expression of disaffiliative and dominant traits. Specifically, D1-R availability may serve as a marker for interpersonal behavior in humans. Associations were demonstrated for the same dimension of interpersonal behavior as for D2-R, but in the opposite direction, suggesting that the two receptor subtypes are involved in the same behavioral processes, but with different functional roles.
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| 2. |
- Ackum, Susanne, et al.
(författare)
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Vi tar fram en handfast plan för en omstart av Sverige
- 2020
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Ingår i: Dagens Nyheter. - 1101-2447. ; :27 april
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- Det är /.../ fullt möjligt att tänka strategiskt och systematiskt även i brinnande kris. Omstartskommissionen hoppas kunna bidra till fokus, analys och konkreta policyförslag för att stödja Sveriges långsiktiga inriktning. Vi kommer att under våren och sommaren anordna seminarier och hearings om vårt arbete, delrapporter ska läggas fram – och när budgetarbetet börjar och Riksdagen öppnar, vill vi kunna bidra med en rejäl och handfast plan för hur vi omstartar Sverige.
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| 3. |
- Borg, Mattias, et al.
(författare)
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GaAs/GaSb nanowire heterostructures grown by MOVPE
- 2008
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 310:18, s. 4115-4121
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Tidskriftsartikel (refereegranskat)abstract
- We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb or AuGa2-GaSb pseudo-binaries of the Au-Ga-Sb ternary phase diagram. Finally, the GaSb nanowires exhibit untapered radial growth on the {1 (1) over bar 0} side facets. (C) 2008 Elsevier B.V. All rights reserved.
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| 4. |
- Braunerhjelm, Pontus, 1953-, et al.
(författare)
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Så startar Sverige om
- 2020
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Annan publikation (populärvet., debatt m.m.)
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| 5. |
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| 6. |
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| 7. |
- Dahlman, Lars, 1701-1764
(författare)
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Dissertatio gradualis, ostendens, actiones humanas, in foro divino non esse meritorias; quam, consent. ampliss. facult. philosoph. in illustri lyceo Upsaliensi, sub præsidio ... Laurentii Dahlman ... publice examinandam sistit, alumnus regius, Ericus Gustavus Borg, Westmannus, in audit. Carol. majori d. [VIII] Junii, MDCCLXIV. H. a. m. c.
- 1764
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)
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| 8. |
- Egard, Mikael, et al.
(författare)
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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- 2013
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Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
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| 9. |
- Egard, Mikael, et al.
(författare)
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
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| 10. |
- Egard, Mikael, et al.
(författare)
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High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011
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Ingår i: 2011 IEEE International Electron Devices Meeting (IEDM). - 9781457705052
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Konferensbidrag (refereegranskat)abstract
- In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
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