| 1. |
- Borseth, T. M., et al.
(författare)
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Annealing study of Sb+ and Al+ ion-implanted ZnO
- 2005
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Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 38:4-6, s. 464-471
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Tidskriftsartikel (refereegranskat)abstract
- In this work we have studied diffusion and electrical activation in Al+ and Sb+ implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000 degrees C in pure oxygen atmosphere, After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.
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| 2. |
- Borseth, T.M., et al.
(författare)
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Identification of oxygen and zinc vacancy optical signals in ZnO
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:26, s. 262112-262115
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between the choice of annealing ambient and the position of the deep band emission (DBE) often detected in ZnO. In particular, annealing in O2 results in a DBE at 2.35±0.05 eV, whereas annealing in the presence of metallic Zn results in DBE at 2.53±0.05 eV. The authors attribute the former band to zinc vacancy (VZn) related defects and the latter to oxygen vacancy (VO) related defects. Additional confirmation for the VO and VZn peak identification comes from the observation that the effect is reversible when O- and Zn-rich annealing conditions are switched. After annealing in the presence of ZnO powder, there is no indication for the VZn- or VO-related bands, but the authors observe a low intensity yellow luminescence band peaking at 2.17 eV, probably related to Li, a common impurity in hydrothermally grown ZnO.
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