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- Pougeoise, E., et al.
(författare)
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1.3 ÎŒm strained InGaAs quantum well VCSELs : Operation characteristics and transverse modes analysis
- 2006
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Ingår i: Vertical-Cavity Surface-Emitting Lasers X. - San Jose, CA : SPIE. ; , s. 13207-13207
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Konferensbidrag (refereegranskat)abstract
- We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.
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