| 1. |
- Emadi, Arezoo, 1977, et al.
(författare)
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Design, Fabrication and characterisation of High Power HBV Diodes
- 2005
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Ingår i: 16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.). ; , s. Session: P05-04
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Konferensbidrag (refereegranskat)abstract
- We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
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| 2. |
- Emadi, Arezoo, 1977, et al.
(författare)
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High power HBV multipliers for F- and G- band applications
- 2004
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Ingår i: IRMMW 2004/THz 2004 / M. Thumm, W. Wiesbeck. - 0780384903 ; , s. 319-320
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Konferensbidrag (refereegranskat)abstract
- Progress and realisation of applications in the 100-240 GHz region is inhibited by the lack of high-power sources. Therefore, in an effort to reach watts of output power, we have tailored devices, circuits, materials, and design and fabrication methods for improved thermal management and high overall conversion efficiencies.
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| 3. |
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| 4. |
- Bryllert, Tomas, et al.
(författare)
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11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
- 2005
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 41:3, s. 131-132
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Tidskriftsartikel (refereegranskat)abstract
- A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs=InAlAs=AlAs epitaxial layers on an InP substrate.
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| 5. |
- Bryllert, Tomas, 1974, et al.
(författare)
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A broadband heterostructure barrier varactor tripler source
- 2010
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Ingår i: 2010 IEEE MTT-S International Microwave Symposium (MTT). - 0149-645X. - 9781424460571 ; , s. 344-347
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Konferensbidrag (refereegranskat)abstract
- We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AlN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17 % at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design.
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| 6. |
- Bryllert, Tomas, 1974, et al.
(författare)
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A monolithic 280 GHz HBV frequency tripler
- 2010
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Ingår i: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. - 9781424466573
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Konferensbidrag (refereegranskat)abstract
- We present the design and measurements of a Heterostructure Barrier Varactor based frequency tripler for 280 GHz. The tripler is fabricated as a monolithic circuit on an InP substrate, including the input and output waveguide probes. Several circuit versions for input power levels between 100 mW and 1W have been designed. © 2010 IEEE.
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| 7. |
- Hanning, Johanna, 1981, et al.
(författare)
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HBV MMIC frequency tripler and quintupler for high power THz applications
- 2011
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Ingår i: Millimetre Wave Days Proceedings,The 6th ESA Workshop on Millimetre-Wave Technology and Applications AND The 4th Global Symposium on Millimeter Waves GSMM2011, May 23rd – May 25th, 2011, MilliLab, Espoo, Finland.
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Konferensbidrag (refereegranskat)abstract
- We present the development status of two different HBV frequency multipliers, with x3 and x5 multiplication for a 282 GHz and 470 GHz output respectively. The multipliers are designed for high power operation and fabricated in an InP monolithic process. Preliminary measurements of the x3 multiplier demonstrate 10 % conversion efficiency at 296 GHz.
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| 8. |
- Olsen, Arne, 1974, et al.
(författare)
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Compact frequency sources using high-order multipliers
- 2009
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Ingår i: 5th ESA Workshop on Millimetre Wave Technology and Applications. ; , s. 189-193
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Konferensbidrag (refereegranskat)abstract
- High-order multipliers are a suitable method for making compact frequency sources for high frequencies (> 100 GHz). A fixed frequency phased-locked source, where a fundamental source is multiplied up using among an in-house varactor diode multiplier, has a low phase noise and will be described in this article. These multipliers are based on the Heterostructure Barrier Varactor (HBV) diode, and can either triple or quintuple the frequency. Fixed frequencies from 90 to 220 GHz can be produced by using a combination of only one diode multiplier and a common source unit. A design rule for next generation of multipliers, where the power handling is emphasised, is also included. These multipliers will take the signal source up to a frequency of 500 GHz.
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| 9. |
- Olsen, Arne, 1974, et al.
(författare)
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HBV Frequency Quintuplers
- 2005
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Ingår i: 16th International Symposium on Space Terahertz Technology.
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Konferensbidrag (refereegranskat)abstract
- A 500 GHz heterostructure-barrier-varactor quintupler has been designed and fabricated. The design consists of a mixture of waveguide and microstrip components for impedance matching. A InP based HBV diode is flip-chip mounted onto the quartz circuit, where beam-leads are used for ground connections to the waveguide block. Extensive back-side processing has been carried out in order to create these beam-leads. The multiplier is a frequency scaled version of a successful 100 GHz quintupler with a conversion efficiency of 11.4%.
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| 10. |
- Sobis, Peter, 1978, et al.
(författare)
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Compact 340 GHz Receiver Front-Ends
- 2009
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Ingår i: 20th International Symposium on Space Terahertz Technology. ; , s. 183-189
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Konferensbidrag (refereegranskat)abstract
- A compact 340 GHz room temperature receiver front-end has been developed consisting of a subharmonic Schottky diode mixer module with an integrated LNA. A novel sideband separation topology has been evaluated by using a pair of the developed mixers interconnected by external waveguide branch guide coupler hybrids for the LO and RF feedings and coaxial IF hybrids, measuring sideband suppression levels of 5 dB to 15 dB over the 315-365 GHz band.For efficient LO pumping of the sideband separating mixer, a novel high power LO chain based on a 5 x 34 GHz HBV quintupler (170 GHz LO source) has been developed with an ultra compact mechanical block housing, not much larger then a waveguide flange. We have also looked into a broadband medium LO power source consisting of a W-band active multiplier module, based on commercial MMIC chips from Hittite, followed by a medium power Schottky doubler from VDI.The demonstrated compact receiver front end has a considerably reduced size and weight owing to the high multiplication factor of the compact LO chain and mixer with integrated LNA. The novel sideband separating topology that uses 90 degree hybrids for both LO and RF resolves the standing wave issue of a previously proposed topology, in which a matched Y-junction was used as an RF hybrid and a branch guide coupler with a 45 degree differential line phase shifter at the output, was used for the LO feeding. The proposed topology improves both the sideband suppression and reduces the standing waves at the LO and RF ports.
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