| 1. |
- Bugiel, Sven, et al.
(författare)
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Implementing an application-specific credential platform using late-launched mobile trusted module
- 2010
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Ingår i: STC '10 Proceedings of the fifth ACM workshop on Scalable trusted computing. - New York, NY, USA : ACM. - 9781450300957 ; , s. 21-30
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Konferensbidrag (refereegranskat)abstract
- Contemporary trusted execution environments provide a good foundation for implementing secure user credentials, but these are not properly bound to the application instances that implement their use. This paper introduces a framework for application-specific credentials and provides a prototype implementation using TCG MTM and DRTM technologies. Measurements and a security analysis is presented for the realised architecture.
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| 2. |
- Czernohorsky, M., et al.
(författare)
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Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing
- 2008
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:3, s. 035010-
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd(2)O(3) layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack ( silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 degrees C anneal.
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| 3. |
- Gottlob, H. D. B., et al.
(författare)
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0.86-nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSINiSi metal electrodes
- 2006
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:10, s. 814-816
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, ultrathin gadolinium oxide (Gd2O3) high-kappa gate dielectrics with complementary-metal-oxide-semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is kappa =-13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.
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| 4. |
- Gottlob, H. D. B., et al.
(författare)
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CMOS integration of epitaxial Gd(2)O(3) high-k gate dielectrics
- 2006
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 50:6, s. 979-985
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial gadolinium oxide (Gd(2)O(3)) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.
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| 5. |
- Peibst, R., et al.
(författare)
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PECVD grown Ge nanocrystals embedded in SiO(2) : From disordered to templated self-organization
- 2009
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Ingår i: MICROELECTRONICS JOURNAL. - : Elsevier BV. - 0026-2692. ; 40:4-5, s. 759-761
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Tidskriftsartikel (refereegranskat)abstract
- We present a new "templated self-organization" method for the preparation of Ge nanocrystals in SiO(2) that combines a bottom-up with a top-down approach for nanostructuring. Ge nanocrystals are formed by self-organization induced by thermal annealing of thin Ge films embedded ill SiO(2) whose areas are predefined by nanoimprint patterning. Thus Much smaller Structure sizes call be achieved than by pure nanostructuring and touch more regular structures call be prepared than by pure self-organization. in particular, the method enables the generation of Ge nanocrystals of equal size at predefined vertical and lateral positions thus facilitating the fabrication of nanoscaled devices due to the Suppression of Structural fluctuations.
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