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Träfflista för sökning "WFRF:(Carlsson Jan Otto Professor) "

Sökning: WFRF:(Carlsson Jan Otto Professor)

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1.
  • Fallberg, Anna, 1980- (författare)
  • Chemical Vapour Deposition of Undoped and Oxygen Doped Copper (I) Nitride
  • 2010
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • In science and technology there is a steadily increased demand of new materials and new materials production processes since they create new application areas as well as improved production technology and economy. This thesis includes development and studies of a chemical vapour deposition (CVD) process for growth of thin films of the metastable material copper nitride, Cu3N, which is a semiconductor and decomposes at around 300 oC. The combination of these properties opens for a variety of applications ranging from solar cells to sensor and information technology. The CVD process developed is based on a metal-organic compound copper hexafluoroacetylacetonate, Cu(hfac)2 , ammonia and water and was working at about 300 oC and  5 Torr. It was found that a small amount of water in the vapour increased the growth rate considerably and that the phase content, film texture, chemical composition and morphology were strongly dependent on the deposition conditions. In-situ oxygen doping during the CVD of Cu3N to an amount of 9 atomic % could also be accomplished by increasing the water concentration in the vapour. Oxygen doping increases the band gap of the material as well as the electrical resistivity and changes the stability. The crystal structure of Cu3N is very open and contains several sites which can be used for doping. Different spectroscopic techniques like X-ray photoelectron spectroscopy, Raman spectroscopy and near edge X-ray absorption fine structure spectroscopy were used to identify the oxygen doping site(s) in Cu3N. Besides the properties, the oxygen doping also affected the morphology and texture of the films. By combining thin layers of different materials several properties can be optimized at the same time. It has been demonstrated in this thesis that multilayers, composed of alternating Cu3N and Cu2O layers, i.e. a metastable and a stable material, could be grown by CVD technique. However, the stacking sequence affected the texture, morphology and chemical composition. The interfaces between the different layers were sharp and no signs of decomposition of the initially deposited metastable Cu3N layer could be detected.
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2.
  • Lindahl, Erik, 1979- (författare)
  • Thin Film Synthesis of Nickel Containing Compounds
  • 2009
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Most electrical, magnetic or optical devices are today based on several, usually extremely thin layers of different materials.  In this thesis chemical synthesis processes have been developed for growth of less stable and metastable layers, and even multilayers, of nickel containing compounds. A chemical vapor deposition (CVD) method for deposition of metastable Ni3N has been developed.  The deposition process employs ammonia as nitrogen precursor. An atomic layer deposition (ALD) process for deposition of both polycrystalline and epitaxial NiO and using low oxygen activity, has also been developed. Both deposition processes utilizes bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) (Ni(thd)2) as the metal precursor. The Ni3N deposition proceeds via surface reactions. The growth rate is very sensitive to the partial pressure of ammonia, why adsorbed –NHx species are believed to be of importance for the film growth. Similar reactions can be expected between the metal precursor and H2O. For ALD of NiO a large excess of water was needed For the multilayered structures of Ni3N/NiO, growth processes, working at low activities of oxygen and hydrogen, are needed to avoid oxidation or reduction of the underlying layer. Chemical vapor growth methods such as CVD and ALD are often suffering from using high activities of hydrogen or oxygen to deposit metals and oxides. An alternative deposition pathway for metal deposition, without any hydrogen in the vapor, has been demonstrated. The metal has been formed by decomposition of the metastable nitride Ni3N in a post-annealing process.  Ni3N decomposes via different mechanisms, depending on environment in the annealing process. The different mechanisms result in different degrees of ordering in the resulting Ni films. From the knowledge gained about the chemical growth of NiO and Ni3N as well as the decomposition of Ni3N, well-defined multilayer structures have been produced in different combinations of NiO, Ni3N and Ni.
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3.
  • Ahlén, Niklas, 1970- (författare)
  • Carbothermal synthesis of transition metal carbide and carbonitride whiskers via a Vapour-Liquid-Solid (VLS) growth mechanism
  • 1999
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • A route for the synthesis of TiC, TiCyN1-y, TaxTi1-xC and TaxTi1-xCyN1-y whiskers via a carbothermal Vapour-Liquid-Solid (VLS) growth mechanism, yielding 70-90 vol.% whiskers, has been established. The whiskers were uniform in diameter (0.3-0.6mm), and had a length of about 10-30mm. The starting materials consisted of TiO2 and/or Ta2O5, C, a catalyst metal (Ni or Fe) and NaCl. Carbon was added to reduce the oxides, and NaCl to provide chlorine in the formation of TiClx(g) and TaOxCly(g) species. The overall chemical reaction is a straightforward carbothermal reduction process. The optimum synthesis temperature was found to be 1250°C for TiCyN1-y, TaxTi1-xC and TaxTi1-xCyN1-y whisker, and 1400°C for TiC. The growth direction of the whiskers was found to be <100> for TaC and TaxTi1-xC and either <100> or <111> for TiC. Nitridation of TiC whiskers yielded TiCyN1-y whiskers with morphology and chemical composition different from those obtained by the carbothermal VLS growth mechanism. From oxidation studies it was found that TiC had the lowest oxidation resistance (onset temperature Ton=390°C) and that TaC had the highest (Ton=550°C). The oxidation onset temperature was found to increase with increasing x-value for both TaxTi1-xC and TaxTi1-xCyN1-y whiskers. Microscopy studies (SEM and TEM) showed that whiskers with a native diameter exceeding 0.3 mm split into two halves along their length when oxidised. It was found that the TiO2 particle size of oxidised TaxTi1-xC whiskers are markedly smaller than that obtained from oxidation of TiC whiskers, whereas the Ta2O5 particle size was the same as that observed for oxidised TaC whiskers.
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4.
  • Arvidsson, Igor, 1976- (författare)
  • Theoretical Investigations of Boron Related Materials Using DFT
  • 2007
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • In the history of Chemistry, materials chemists have developed their ideas mainly by doing experiments in laboratories. The underlying motivation for this laboratory work has generally been pure curiosity or the ambition to find a solution to a specific problem. Minor changes in the composition or structure of a material can cause major changes in its properties. The development of powerful computers has now opened up the possibility to calculate properties of new materials using quantum mechanical methods.The Chemistry of different boron-related materials has been evaluated in this thesis by Density Functional Theory (DFT). Cubic boron nitride (c-BN) is a most interesting material for the microelectronics and tool industry. During thin film deposition of c-BN, several problems arise which most often result in unwanted BN isomorphs. Chemical processes at the (110) and (111) surface of c-BN have been investigated in order to shed light upon some of these complex processes. Typically adsorption energies and surface reconstruction were found to differ significantly between the two surfaces. Other materials investigated are layered transition-metal diborides (MeB2). Incorporation of transition-metal atoms into elemental boron in its most fundamental structure, ά-boron, has also been investigated. The calculations on MeB2 focused on the stability of the planar compared to the puckered structure of MeB2. Stability was investigated by calculating Density of States (DOS) and bond populations. Deviations in the cell parameters from their ideal values were also considered. A separate project concerned reactivity of the TiB2(001) surface. Molecular and dissociated adsorption energies and adsorption geometries were calculated for H2, H2O and O2. It was concluded that the titanium surface was more reactive than the boron surface and that the adsorption energies were comparable to or stronger than other well known surface-active compounds like TiO2.
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5.
  • Eskhult, Jonas, 1977- (författare)
  • Electrochemical Deposition of Nanostructured Metal/Metal-Oxide Coatings
  • 2007
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Electrochemical deposition finds applications in the electronics- and protective coating industries. The technique is a versatile tool for the synthesis of alloys and thin films. Knowledge of the fundamental aspects of the electrode processes enables the design of nanostructured materials. In this thesis, electrodeposition processes in solutions containing metal ion complexes were studied and new methods for the preparation of metal/metal-oxide coatings were developed and evaluated. Metal/metal oxide coatings were electrodeposited from aqueous solutions containing metal complexes of hydroxycarboxylic acids under reducing conditions. The mass changes of the working electrode were monitored in-situ with the electrochemical quartz crystal microbalance (EQCM) technique and ellipsometry was used to detect the formation of Cu2O. The coatings were further characterized with XRD, XPS, SEM, TEM, and Raman spectroscopy. Electrochemical methods, including reduction of Sb/Sb2O3 in an organic electrolyte, were also used to study the properties of the deposited materials. Nanostructured coatings of Cu/Cu2O were obtained during spontaneous potential or current oscillations in alkaline Cu(II)-citrate solutions. The oscillations were due to local pH variations induced by a subsequent chemical step and comproportionation between Cu and Cu2+. Well-defined layers of Cu and Cu2O could be prepared by a galvanostatic pulsing technique, allowing independently controlled thickness of several hundred nanometers. Coatings, containing Sb and co-deposited, nanograins of Sb2O3, with a thickness of up to 200 nm were prepared from poorly buffered Sb(III)-tartrate solutions. Galvanostatic cycling showed that the latter material could be reversibly charged and discharged in a Li-ion battery for more than 50 cycles with a capacity of 660 mAh/g. The results show that precipitations of metal oxides can occur due to local pH increases during electrochemical deposition from metal complexes with ligands containing hydroxyl groups. The ability to deposit metal oxides using cathodic deposition relies on a sufficiently slow reduction of the oxide.
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6.
  • Olander, Jenny (författare)
  • Studies on Growth of SiC and BN : from Theory and Experiments
  • 2003
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Smaller cellular telephones and more energy-efficient windows are just two examples of technological advances which call for new materials. Materials chemists seek to develop new materials, both out of pure curiosity to see which combination of elements and structures can be obtained and in efforts to produce materials, with specific properties. The starting materials (in solid, liquid or gaseous form) can then be combined and prepared in various ways. A chemical method that is gaining more attention for thin-film growth is Atomic Layer Deposition (ALD). This is a sophisticated type of vapor deposition in which the precursor gases are introduced separately into the reaction chamber.Silicon carbide (SiC) and cubic boron nitride (c-BN) are extremely hard diamond-like materials, both with a high potential for application within the modern microelectronics and tool industry. Hexagonal boron nitride (h-BN), with its graphite-like layered structure, is a promising ceramics material.Deposition of thin SiC and BN films from gaseous precursors has been studied by theoretical and experimental methods. The chemical composition and atomic arrangement of a growing surface is important for vapor growth. The surface may be terminated (e.g., by hydrogen atoms) and adopt various geometrical structures. Reconstruction of unterminated SiC(0001) surfaces, as well as H abstraction from the corresponding H-terminated surfaces, were studied using quantum mechanical calculations. Elementary reactions for vapor growth of SiC and BN, and in situ incorporation of dopant and contaminant species into these surfaces were also investigated theoretically. Moreover, thin films of BN were deposited by means of laser-assisted ALD. The general goal has been to predict and/or explain experimental results by investigating growth mechanisms.
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7.
  • Petrini, Daniel, 1976- (författare)
  • Surface Stabilization and Electrochemical Properties from a Theoretical Perspective
  • 2007
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Diamond and cubic boron nitride surfaces have extreme properties that can be exploited in novel tribological, electrochemical and electronic applications. Normally insulating diamond surfaces can exhibit high surface conductivities due to hydrogen termination and the nature of the surrounding atmosphere. Successful growth of cubic boron nitride thin films is hindered when harsh synthesis methods are used.Three significant surface-related properties are addressed in this thesis using computational methods: (1) the structure, energy stability and reactivity of clean and differently terminated diamond surfaces, (2) the high surface conductivity of diamond, and (3) the adsorption-induced stability, reactivity and reconstruction of the cubic boron nitride (100) surface. Density Functional Theory (DFT) has been used at the GGA level under periodic boundary conditions to simulate the diamond and cubic boron nitride surfaces. The diamond surface structures are shown to be insensitive to hydrogen desorption. Oxygen atoms bind in different positions and with different bond strengths. Hydroxyl groups experience both attractive hydrogen bonding and steric repulsions within the adsorbed species. The reconstruction of diamond (111)-1x1 is strongly dependent on the species adsorbed onto the surface. Electron transfer was observed from a diamond surface into a water-based adlayer, yielding a p-type doped surface, depending on the nature of the surface and the adlayer. The cubic boron nitride (100)-1x1 surface was shown to reconstruct into a 2x1 configuration on both the boron- and nitrogen-rich side through the formation of B-B bonds, as well as N–N dimer-induced surface relaxation. Hydrogen stabilized the (100)-1x1 surface, but the partial removal of hydrogen yielded non-reactive dimer formation on the surface.
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8.
  • Rooth, Mårten, 1977- (författare)
  • Metal Oxide Thin Films and Nanostructures Made by ALD
  • 2008
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Thin films of cobalt oxide, iron oxide and niobium oxide, and nanostructured thin films of iron oxide, titanium oxide and multilayered iron oxide/titanium oxide have been deposited by Atomic Layer Deposition (ALD). The metal oxides were grown using the precursor combinations CoI2/O2, Fe(Cp)2/O2, NbI5/O2 and TiI4/H2O. The samples were analysed primarily with respect to phase content, morphology and growth characteristics.Thin films deposited on Si (100) were found to be amorphous or polycrystalline, depending on deposition temperature and the oxide deposited; cobalt oxide was also deposited on MgO (100), where it was found to grow epitaxially with orientation (001)[100]Co3O4||(001)[100]MgO. As expected, the polycrystalline films were rougher than the amorphous or the epitaxial films. The deposition processes showed properties characteristic of self-limiting ALD growth; all processes were found to have a deposition temperature independent growth region. The deposited films contained zero or only small amounts of precursor residues.The nanostructured films were grown using anodic aluminium oxide (AAO) or carbon nanosheets as templates. Nanotubes could be manufactured by depositing a thin film which covers the pore walls of the AAO template uniformly; free-standing nanotubes retaining the structure of the template could be fabricated by removing the template. Multilayered nanotubes could be obtained by depositing multiple layers of titanium dioxide and iron oxide in the pores of the AAO template. Carbon nanosheets were used to make titanium dioxide nanosheets with a conducting graphite backbone. The nucleation of the deposited titanium dioxide could be controlled by acid treatment of the carbon nanosheets.
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