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Träfflista för sökning "WFRF:(Cattelan Mattia) "

Sökning: WFRF:(Cattelan Mattia)

  • Resultat 1-3 av 3
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1.
  • Basagni, Andrea, et al. (författare)
  • On-surface photo-dissociation of C-Br bonds: towards room temperature Ullmann coupling
  • 2015
  • Ingår i: Chemical Communications. - : Royal Society of Chemistry (RSC). - 1364-548X .- 1359-7345. ; 51:63, s. 12593-12596
  • Tidskriftsartikel (refereegranskat)abstract
    • The surface-assisted synthesis of gold-organometallic hybrids on the Au(111) surface both by thermo-and light-initiated dehalogenation of bromo-substituted tetracene is reported. Combined X-ray photoemission (XPS) and scanning tunneling microscopy (STM) data reveal a significant increase of the surface order when mild reaction conditions are combined with 405 nm light irradiation.
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2.
  • Cattelan, Mattia, et al. (författare)
  • Anodization study of epitaxial graphene : insights on the oxygen evolution reaction of graphitic materials
  • 2019
  • Ingår i: Nanotechnology. - : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 30:28
  • Tidskriftsartikel (refereegranskat)abstract
    • The photoemission electron microscopy and x-ray photoemission spectroscopy were utilized for the study of anodized epitaxial graphene (EG) on silicon carbide as a fundamental aspect of the oxygen evolution reaction on graphitic materials. The high-resolution analysis of surface morphology and composition quantified the material transformation during the anodization. We investigated the surface with lateral resolution amp;lt;150 nm, revealing significant transformations on the EG and the role of multilayer edges in increasing the film capacitance.
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3.
  • Rost, Hakon, I, et al. (författare)
  • A Simplified Method for Patterning Graphene on Dielectric Layers
  • 2021
  • Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 13:31, s. 37500-37506
  • Tidskriftsartikel (refereegranskat)abstract
    • The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report mu m scale, few-layer graphene structures formed at moderate temperatures (600-700 degrees C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
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  • Resultat 1-3 av 3

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