| 1. |
- Giuliani, G., et al.
(författare)
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Round-Robin Measurements of Linewidth Enhancement Factor of Semiconductor Lasers in COST 288 Action
- 2007
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Ingår i: Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on. - 1424409306 - 9781424409303 ; , s. 4385967-
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Konferensbidrag (refereegranskat)abstract
- Round-robin measurements on the linewidth enhancement factor are carried out in many laboratories participating to EU COST 288 Action. Up to 7 different techniques are applied to DFB, VCSELs, QCL, and QD lasers, and results are compared.
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| 2. |
- Ostrovskis, A., et al.
(författare)
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106.25 Gbaud On-Off Keying and Pulse Amplitude Modulation Links Supporting Next Generation Ethernet on Single Lambda
- 2024
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 42:4, s. 1272-
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Tidskriftsartikel (refereegranskat)abstract
- Development of Data Center based computing technology require energy efficient high-speed transmission links. This leads to optical amplification-free intensity modulation and direct detection (IM/DD) systems with low complexity equalization compliant with IEEE standardized electrical interfaces. Switching from on-off keying to multi-level pulse amplitude modulation would allow to reduce lane count for next generation Ethernet interfaces. We characterize 106.25 Gbaud on-off keying, 4-level and 6-level pulse amplitude modulation links using two integrated transmitters: O-band directly modulated laser and C-band externally modulated laser. Simple feed forward or decision feedback equalizer is used. We demonstrate 106.25 Gbaud on-off keying links operating without forward error correction for both transmitters. We also show 106.25 Gbaud 4-level and 6-level pulse amplitude modulation links with performance below 6.25% overhead hard-decision forward error threshold of 4.5×10-3. Furthermore, for EML-based transmitter we achieve 106.25 Gbaud 4-level pulse amplitude modulation performance below KP-FEC threshold of 2.2×10-4. That shows that we can use optics to support (2x)100 Gbps Ethernet on single lambda at expense of simple forward error correction.
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| 3. |
- Villafranca, A., et al.
(författare)
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Linewidth Enhancement Factor of Semiconductor Lasers : Results from Round-Robin Measurements in COST 288
- 2007
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Ingår i: 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5.
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Konferensbidrag (refereegranskat)abstract
- Round-robin measurements on the linewidth enhancement factor are carried out within several laboratories participating to EU COST 288 action. The alpha-factor is measured by applying up to 7 different techniques. The obtained results are compared.
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| 4. |
- Gerschutz, F., et al.
(författare)
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Temperature insensitive 1.3 mu m InGaAs/GaAs quantum dot distributed feedback lasers for 10 Gbit/s transmission over 21 km
- 2006
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 42:25, s. 1457-1458
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Tidskriftsartikel (refereegranskat)abstract
- Long wavelength monomode InGaAs/GaAs quantum dot (QD) distributed feedback (DFB) lasers with emission wavelength around 1325 ran are presented. Threshold currents below 19 mA for operating temperatures up to 70 degrees C and Output powers of 10 mW at 25 degrees C (6 mW at 70 degrees C) are observed. Error-free 10 Gbit/s transmission over 21 kin fibre with an extinction ratio of 8.5 dB at room temperature (5.1 dB at 70 degrees C) is demonstrated. The low threshold, low temperature sensitivity and high modulation speed were realised using complex coupled DFB lasers with ten stacks of self-organised MBE-grown QD layers and p-type modulation doping.
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| 5. |
- Rong, Y., et al.
(författare)
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High speed optical modulation in Ge quantum wells using quantum confined stark effect
- 2012
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Ingår i: Frontiers of Optoelectronics. - : Springer Science and Business Media LLC. - 2095-2759 .- 2095-2767. ; 5:1, s. 82-89
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Tidskriftsartikel (refereegranskat)abstract
- We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells (QWs) with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QWstructures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3. 5 GHz, a small driving voltage of 2. 5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are investigated.
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| 6. |
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| 7. |
- Isaksson, M., et al.
(författare)
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10 Gb/s direct modulation of 40 nm tunable modulated-grating Y-branch laser
- 2005
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Ingår i: Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC. - 1557527830 - 9781557527837 ; , s. 117-119
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Konferensbidrag (refereegranskat)abstract
- High speed properties of a directly modulated widely tunable MG-Y laser have been evaluated. Small signal response and 10 Gb/s NRZ modulation were performed within the 40 nm tuning range.
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| 8. |
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| 9. |
- Silfvenius, C., et al.
(författare)
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InP-based monolithically integrated 1310/1550nm diplexer/triplexer
- 2008
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE.
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Konferensbidrag (refereegranskat)abstract
- We demonstrate a low cost, non-butt-joint, wide-gain integrated device comprising 1550nm lasers, wavelength selective couplers and 1310nm sensitive photodiodes for diplexer arrays for FTTH use.
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