| 1. |
- Chen, Zhengchuan, et al.
(författare)
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Analysis of Age of Information in Dual Updating Systems
- 2023
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Ingår i: IEEE Transactions on Wireless Communications. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 1536-1276 .- 1558-2248. ; 22:11, s. 8003-8019
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Tidskriftsartikel (refereegranskat)abstract
- We study the average Age of Information (AoI) and peak AoI (PAoI) of a dual-queue status update system that monitors a common stochastic process through two independent channels. Although the double queue parallel transmission is instrumental in reducing AoI, the out of order of data arrivals also imposes a significant challenge to the performance analysis. We consider two settings: the M-M system where the service time of two servers is exponentially distributed; the M-D system in which the service time of one server is exponentially distributed and that of the other is deterministic. For the two dual-queue systems, closed-form expressions of average AoI and PAoI are derived by resorting to the graphic method and state flow graph analysis method. Our analysis reveals that when the two servers have the same service rate, compared with the single-queue system with an exponentially distributed service time, the average PAoI and the average AoI of the M-M system decrease by 33.3% and 37.5%, respectively, and those of the M-D system decrease by 27.7% and 39.7%, respectively. Numerical results show that the two dual-queue systems also outperform the M/M/2 single queue dual-server system with optimized arrival rate in terms of average AoI and PAoI.
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| 2. |
- Deng, Dapeng, et al.
(författare)
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Information Freshness in A Dual Monitoring System
- 2022
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Ingår i: 2022 IEEE GLOBAL COMMUNICATIONS CONFERENCE (GLOBECOM 2022). - : IEEE. - 9781665435406 - 9781665435413 ; , s. 4977-4982
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Konferensbidrag (refereegranskat)abstract
- We study the average age of information (AoI) and peak AoI (PAoI) of a dual-queue status update system that monitors a common stochastic process. We capture the state transition characteristics of the considered system by establishing a Markov chain. Using the state flow graph analysis method, we derive closed-form expressions of the average peak age of information (PAoI) and the average age of information (AoI) for the dual-queue update system. The numerical results show that compared with the single-queue update system, the average PAoI of the dual-queue update system is reduced by 33.5% and the average AoI dropped by 37.5%.
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| 3. |
- Felsberg, Michael, et al.
(författare)
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The Thermal Infrared Visual Object Tracking VOT-TIR2015 Challenge Results
- 2015
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Ingår i: Proceedings of the IEEE International Conference on Computer Vision. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781467383905 ; , s. 639-651
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Konferensbidrag (refereegranskat)abstract
- The Thermal Infrared Visual Object Tracking challenge 2015, VOTTIR2015, aims at comparing short-term single-object visual trackers that work on thermal infrared (TIR) sequences and do not apply prelearned models of object appearance. VOT-TIR2015 is the first benchmark on short-term tracking in TIR sequences. Results of 24 trackers are presented. For each participating tracker, a short description is provided in the appendix. The VOT-TIR2015 challenge is based on the VOT2013 challenge, but introduces the following novelties: (i) the newly collected LTIR (Linköping TIR) dataset is used, (ii) the VOT2013 attributes are adapted to TIR data, (iii) the evaluation is performed using insights gained during VOT2013 and VOT2014 and is similar to VOT2015.
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| 4. |
- Kristan, Matej, et al.
(författare)
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The Visual Object Tracking VOT2016 Challenge Results
- 2016
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Ingår i: COMPUTER VISION - ECCV 2016 WORKSHOPS, PT II. - Cham : SPRINGER INT PUBLISHING AG. - 9783319488813 - 9783319488806 ; , s. 777-823
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Konferensbidrag (refereegranskat)abstract
- The Visual Object Tracking challenge VOT2016 aims at comparing short-term single-object visual trackers that do not apply pre-learned models of object appearance. Results of 70 trackers are presented, with a large number of trackers being published at major computer vision conferences and journals in the recent years. The number of tested state-of-the-art trackers makes the VOT 2016 the largest and most challenging benchmark on short-term tracking to date. For each participating tracker, a short description is provided in the Appendix. The VOT2016 goes beyond its predecessors by (i) introducing a new semi-automatic ground truth bounding box annotation methodology and (ii) extending the evaluation system with the no-reset experiment.
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| 5. |
- Liao, Yaoming, et al.
(författare)
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Downscaling of future precipitation in china’s beijing-tianjin-hebei region using a weather generator
- 2022
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Ingår i: Atmosphere. - : MDPI AG. - 2073-4433. ; 13:1
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Tidskriftsartikel (refereegranskat)abstract
- To project local precipitation at the existing meteorological stations in China’s Beijing-Tianjin-Hebei region in the future, local daily precipitation was simulated for three periods (2006–2030, 2031–2050, and 2051–2070) under RCP 4.5 and RCP 8.5 emission scenarios. These projections were statistically downscaled using a weather generator (BCC/RCG-WG) and the output of five global climate models. Based on the downscaled daily precipitation at 174 stations, eight indices describing mean and extreme precipitation climates were calculated. Overall increasing trends in the frequency and intensity of the mean and extreme precipitation were identified for the majority of the stations studied, which is in line with the GCMs’ output. However, the downscaling approach enables more local features to be reflected, adding value to applications at the local scale. Compared with the baseline during 1961–2005, the regional average annual precipitation and its intensity are projected to increase in all three future periods under both RCP 4.5 and RCP 8.5. The projected changes in the number of days with precipitation are relatively small across the Beijing-Tianjin-Hebei region. The regional average annual number of days with precipitation would increase by 0.2~1.0% under both RCP 4.5 and RCP 8.5, except during 2031–2050 under RCP 8.5 when it would decrease by 0.7%. The regional averages of annual days with precipitation ≥25 mm and ≥40 mm, the greatest one-day and five-day precipitation in the Beijing-Tianjin-Hebei region, are projected to increase by 8~30% during all the three periods. The number of days with daily precipitation ≥40 mm was projected to increase most significantly out of the eight indices, indicating the need to consider increased flooding risk in the future. The average annual maximum number of consecutive days without precipitation in the Beijing-Tianjin-Hebei region is projected to decrease, and the drought risk in this area is expected to decrease.
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| 6. |
- Luo, Jun, et al.
(författare)
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Effects of carbon pre-silicidation implant into Si substrate on NiSi
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 178-181
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.
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| 7. |
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| 8. |
- Luo, Jun, et al.
(författare)
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Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
- 2011
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:8, s. 1029-1031
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.
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| 9. |
- Luo, Jun, et al.
(författare)
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Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 174-177
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Tidskriftsartikel (refereegranskat)abstract
- Change of contact resistivity (rho(c)) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal-semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current-voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance-voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease of rho(c). A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed. (C) 2013 Elsevier B.V. All rights reserved.
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| 10. |
- Wang, Guilei, et al.
(författare)
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Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology
- 2016
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Ingår i: Microelectronic Engineering. - : Elsevier. - 0167-9317 .- 1873-5568. ; 163, s. 49-54
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Tidskriftsartikel (refereegranskat)abstract
- In this study, the process integration of SiGe selective epitaxy on source/drain regions, for 16/14 nm nodes FinFET with high-k & metal gate has been presented. Selectively grown Si1-xGex (0.35 <= x <= 0.40) with boron concentration of 1 x 10(20) cm(-3) was used to elevate the source/drain of the transistors. The epi-quality, layer profile and strain amount of the selectively grown SiGe layers were also investigated by means of various characterizations. A series of prebaking experiments were performed for temperatures ranging from 740 to 825 degrees C in order to in situ clean the Si fins prior to the epitaxy. The results showed that the thermal budget needs to be limited to 780-800 degrees C in order to avoid any damages to the shape of Si fins but to remove the native oxide effectively which is essential for high epitaxial quality. The Ge content in SiGe layers on Si fins was determined from the strain measured directly by reciprocal space mappings using synchrotron radiation. Atomic layer deposition technique was applied to fill the gate trench with W using WF6 and B2H6 precursors. By such an AID approach, decent growth rate, low resistivity and excellent gap filling capability of W in pretty high aspect-ratio gate trench was realized. The as-fabricated FinFETs demonstrated decent electrical characteristics.
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