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Sökning: WFRF:(Choudhury Debraj)

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1.
  • Choudhury, Debraj, et al. (författare)
  • Tuning of dielectric properties and magnetism of SrTiO3 by site-specific doping of Mn
  • 2011
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 84:12, s. 125124-
  • Tidskriftsartikel (refereegranskat)abstract
    • Combining experiments with first-principles calculations, we show that site-specific doping of Mn into SrTiO(3) has a decisive influence on the dielectric properties of these doped systems. We find that phonon contributions to the dielectric constant invariably decrease sharply on doping at any site. However, a sizable, random dipolar contribution only for Mn at the Sr site arises from a strong off-centric displacement of Mn in spite of Mn being in a non-d(0) state; this leads to a large dielectric constant at higher temperatures and gives rise to a relaxor ferroelectric behavior at lower temperatures. We also investigate magnetic properties in detail and critically reevaluate the possibility of a true multiglass state in such systems.
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2.
  • Mukherjee, Sumanta, et al. (författare)
  • Origin and distribution of charge carriers in LaAlO3-SrTiO3 oxide heterostructures in the high carrier density limit
  • 2016
  • Ingår i: PHYSICAL REVIEW B. - 2469-9950. ; 93:24
  • Tidskriftsartikel (refereegranskat)abstract
    • Using hard x-ray photoelectron spectroscopywith variable photon energy (2-8 keV), we address the distribution of charge carriers in the prototypical LaAlO3 (LAO) and SrTiO3 (STO) oxide heterostructures with high carrier densities (10(17) cm(-2)). Our results demonstrate the presence of two distinct charge distributions in this system: one tied to the interface with a similar to 1-nm width and similar to 2-5 x 10(14)-cm(-2) carrier concentration, while the other appears distributed nearly homogeneously through the bulk of STO corresponding to a much larger carrier contribution. Our results also establish bimodal oxygen vacancies, namely on top of LAO and throughout STO, quantitatively establishing these as the origin of the observed bimodal depth distribution of charge carriers in these highly doped sample.
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