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  • Mathijssen, Simon G. J., et al. (author)
  • Charge trapping at the dielectric of organic transistors visualized in real time and space
  • 2008
  • In: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:5, s. 975-
  • Journal article (peer-reviewed)abstract
    • Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Kemerink, Martijn (1)
Janssen, Rene A. J. (1)
de Leeuw, Dago M. (1)
Bobbert, Peter A. (1)
Sharma, Abhinav (1)
Mathijssen, Simon G. ... (1)
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Coelle, Michael (1)
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University
Linköping University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2008 (1)

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