| 1. |
- Thomas, HS, et al.
(författare)
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- 2019
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swepub:Mat__t
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| 2. |
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| 3. |
- Drake, TM, et al.
(författare)
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Surgical site infection after gastrointestinal surgery in children: an international, multicentre, prospective cohort study
- 2020
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Ingår i: BMJ global health. - : BMJ. - 2059-7908. ; 5:12
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Tidskriftsartikel (refereegranskat)abstract
- Surgical site infection (SSI) is one of the most common healthcare-associated infections (HAIs). However, there is a lack of data available about SSI in children worldwide, especially from low-income and middle-income countries. This study aimed to estimate the incidence of SSI in children and associations between SSI and morbidity across human development settings.MethodsA multicentre, international, prospective, validated cohort study of children aged under 16 years undergoing clean-contaminated, contaminated or dirty gastrointestinal surgery. Any hospital in the world providing paediatric surgery was eligible to contribute data between January and July 2016. The primary outcome was the incidence of SSI by 30 days. Relationships between explanatory variables and SSI were examined using multilevel logistic regression. Countries were stratified into high development, middle development and low development groups using the United Nations Human Development Index (HDI).ResultsOf 1159 children across 181 hospitals in 51 countries, 523 (45·1%) children were from high HDI, 397 (34·2%) from middle HDI and 239 (20·6%) from low HDI countries. The 30-day SSI rate was 6.3% (33/523) in high HDI, 12·8% (51/397) in middle HDI and 24·7% (59/239) in low HDI countries. SSI was associated with higher incidence of 30-day mortality, intervention, organ-space infection and other HAIs, with the highest rates seen in low HDI countries. Median length of stay in patients who had an SSI was longer (7.0 days), compared with 3.0 days in patients who did not have an SSI. Use of laparoscopy was associated with significantly lower SSI rates, even after accounting for HDI.ConclusionThe odds of SSI in children is nearly four times greater in low HDI compared with high HDI countries. Policies to reduce SSI should be prioritised as part of the wider global agenda.
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| 4. |
- Coletti, C., et al.
(författare)
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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
- 2013
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 88:15
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Tidskriftsartikel (refereegranskat)abstract
- In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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| 5. |
- Coletti, C., et al.
(författare)
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Large area quasi-free standing monolayer graphene on 3C-SiC(111)
- 2011
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:8
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Tidskriftsartikel (refereegranskat)abstract
- Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]
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| 6. |
- Emtsev, Konstantin V., et al.
(författare)
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Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation
- 2011
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 84:12
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of decoupled graphene on SiC(0001) can be tailored by introducing atomically thin layers of germanium at the interface. The electronically inactive (6 root 3 x 6 root 3)R30 degrees reconstructed buffer layer on SiC(0001) is converted into quasi-free-standing monolayer graphene after Ge intercalation and shows the characteristic graphene pi bands as displayed by angle-resolved photoelectron spectroscopy. Low-energy electron microscopy (LEEM) studies reveal an unusual mechanism of the intercalation in which the initial buffer layer is first ruptured into nanoscopic domains to allow the local in-diffusion of germanium to the interface. Upon further annealing, a continuous and homogeneous quasifree graphene film develops. Two symmetrically doped (n- and p-type) phases are obtained that are characterized by different Ge coverages. They can be prepared individually by annealing a Ge film at different temperatures. In an intermediate-temperature regime, a coexistence of the two phases can be achieved. In this transition regime, n-doped islands start to grow on a 100-nm scale within p-doped graphene terraces as revealed by LEEM. Subsequently, the n islands coalesce but still adjacent terraces may display different doping. Hence, lateral p-n junctions can be generated on epitaxial graphene with their size tailored on a mesoscopic scale.
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| 7. |
- Forti, S., et al.
(författare)
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Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization
- 2011
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 84:12
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Tidskriftsartikel (refereegranskat)abstract
- The growth of epitaxial graphene on SiC has been identified as one of the most promising techniques to produce graphene for electronic applications. In this paper, we present a systematic study of the electronic and structural properties of large-area quasifree standing epitaxial monolayer graphene grown on top of the SiC(0001) surface. For this purpose, we combine the thermal treatment of SiC in Ar atmosphere to achieve a homogeneous coverage of the surface with the hydrogen intercalation process, which leads to the removal of the interaction between the substrate and the carbon layer. The band structure in the vicinity of the (K) over bar point is measured using high-resolution angle-resolved photoelectron spectroscopy. A detailed analysis of the quasiparticle dynamics reveals a renormalization of the band velocity estimated to about 3% at energies around 200 meV below the Fermi level, which mainly originates from electron-phonon interaction. Further analysis of the momentum distribution curves leads to the formulation of a model for the doping reduction in such a system in the course of sample annealing above 650 degrees C. The uniformity and homogeneity of the graphene is demonstrated by means of low-energy electron microscopy (LEEM). Microphotoelectron spectroscopy data confirm the high structural quality and homogeneity of the quasifree standing graphene. Using LEEM and scanning tunneling microscopy, we demonstrate that the hydrogen desorption at elevated temperatures of approximately 750 degrees C sets in on the graphene terraces rather than via the step edges.
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| 8. |
- Forti, S., et al.
(författare)
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Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice
- 2016
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 3:3
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Tidskriftsartikel (refereegranskat)abstract
- The electronic band structure of an epitaxial graphene superlattice, generated by intercalating a monolayer of Cu atoms, is directly imaged by angle-resolved photoelectron spectroscopy. The 3.2 nm lateral period of the superlattice is induced by a varying registry between the graphene honeycomb and the Cu atoms as imposed by the heteroepitaxial interface Cu/SiC. The carbon atoms experience a lateral potential across the supercell of an estimated value of about 65 meV. The potential leads to strong energy renormalization in the band structure of the graphene layer and the emergence of mini-Dirac cones. The mini-cones' band velocity is reduced to about half of graphene's Fermi velocity. Notably, the ordering of the interfacial Cu atoms can be reversibly blocked by mild annealing. The superlattice indeed disappears at∼220 °C.
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| 9. |
- Melles, Martin, et al.
(författare)
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2.8 million years of arctic climate change from Lake El'gygytgyn, NE Russia
- 2012
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 337:6092, s. 315-320
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Tidskriftsartikel (refereegranskat)abstract
- The reliability of Arctic climate predictions is currently hampered by insufficient knowledge of natural climate variability in the past. A sediment core from Lake El'gygytgyn in northeastern (NE) Russia provides a continuous, high-resolution record from the Arctic, spanning the past 2.8 million years. This core reveals numerous "super interglacials" during the Quaternary; for marine benthic isotope stages (MIS) 11c and 31, maximum summer temperatures and annual precipitation values are similar to 4 degrees to 5 degrees C and similar to 300 millimeters higher than those of MIS 1 and 5e. Climate simulations show that these extreme warm conditions are difficult to explain with greenhouse gas and astronomical forcing alone, implying the importance of amplifying feedbacks and far field influences. The timing of Arctic warming relative to West Antarctic Ice Sheet retreats implies strong interhemispheric climate connectivity.
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