2. |
- Sanz-Velasco, Anke, 1971, et al.
(författare)
-
Low-Temperature Direct Wafer Bonding
- 2012
-
Ingår i: Lattice Engineering: Technology and Applications. ; , s. 135-187
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high-power and high-frequency electronics, microelectronics components with low energy consumption. After this, several bonding techniques have been developed (e.g. silicon direct bonding, anodic bonding) and are being developed (e.g. low-temperature plasma-assisted direct bonding) to achieve hybrid components, as III-V semiconductors on silicon-based substrates, monolithic integration of optoelectronic devices with high-speed silicon integrated circuits, three-dimensional stacking of integrated circuits (ICs) or circuits transfer onto a varietyof substrates. An overview of more recent activities on several techniques for attaining low-temperature bonding is presented.
|
|