| 1. |
- Krotkus, A., et al.
(författare)
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Be-doped low-temperature-grown GaAs material for optoelectronic switches
- 2002
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Ingår i: IEE Proceedings - Optoelectronics. - : Institution of Engineering and Technology (IET). - 1350-2433 .- 1359-7078. ; 149:3, s. 111-115
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Tidskriftsartikel (refereegranskat)abstract
- Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to sigma(n) = 1.1 x 10(-13) and sigma(p) = 1.8 x 10(-15) cm(2) were also determined.
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| 2. |
- Dell'Anna, M., et al.
(författare)
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THz Spectroscopy Using Low Temperature Mesoscopic Devices
- 2012
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Ingår i: Journal of Low Temperature Physics. - : Springer Science and Business Media LLC. - 0022-2291 .- 1573-7357. ; 167:3-4, s. 467-472
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Tidskriftsartikel (refereegranskat)abstract
- The prototype of a THz spectroscopic camera based on low temperature mesoscopic devices is presented. The core of this system is an array of Quantum-Dots coupled to Quantum Point Contact sensors. Readout electronics is based on Time Domain Multiplexing combined with Lock-in technique. Results show that such system can reach the sensitivity needed to detect THz emission of materials in a fully passive way.
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| 3. |
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| 4. |
- Soylu, G., et al.
(författare)
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Sub-Wavelength THz Imaging of the Domains in Periodically Poled Crystals Through Optical Rectification
- 2020
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Ingår i: Journal of Infrared, Millimeter and Terahertz Waves. - : Springer. - 1866-6892 .- 1866-6906. ; 41:9, s. 1144-1154
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Tidskriftsartikel (refereegranskat)abstract
- By focusing a femtosecond laser beam onto the lateral face of a periodically poled KTP crystal, we generate a THz pulse through optical rectification of the laser pulse. The THz signal is recorded by means of a common THz time-domain technique, which allows us to obtain both the magnitude and sign of the THz waveform, and then the magnitude and phase of its spectral components thanks to a numerical Fourier-transform. By moving the laser beam along the crystal, we record a THz signal that renders for the alternative orientation of the crystal domains, with a lateral resolution as good as 10 mu m, whatever the THz wavelength. This demonstrates the potential of the Optical Rectification TeraHertz Imaging (ORTI) technique to produce sub-wavelength THz images.
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| 5. |
- Soylu, G., et al.
(författare)
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Sub-wavelength THz imaging through optical rectification
- 2019
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Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - : IEEE Computer Society. - 9781538682852
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Konferensbidrag (refereegranskat)abstract
- Sub-wavelength THz imaging has previously been demonstrated by the optical rectification method, i.e. generating THz waves in the sample [1]. We have rendered the initial experimental setup more practical by using a simple fs laser oscillator and an efficient photo-conducting detector. We thus recorded images, at different THz frequencies with a 41-μm lateral resolution, of a sample made of ZnTe grains, and generated THz peak magnitudes with a 33 μm and 12 μm lateral resolution of a periodically poled KTP crystal.
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