| 1. |
- Ryu, Y. -H., et al.
(författare)
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OGLE-2016-BLG-1190Lb : The First Spitzer Bulge Planet Lies Near the Planet/Brown-dwarf Boundary
- 2018
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Ingår i: Astronomical Journal. - : American Astronomical Society. - 0004-6256 .- 1538-3881. ; 155:1
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Tidskriftsartikel (refereegranskat)abstract
- We report the discovery of OGLE-2016-BLG-1190Lb, which is likely to be the first Spitzer microlensing planet in the Galactic bulge/ bar, an assignation that can be confirmed by two epochs of high-resolution imaging of the combined source-lens baseline object. The planet's mass, M-p = 13.4 +/- 0.9 M-J, places it right at the deuteriumburning limit, i. e., the conventional boundary between planets and brown dwarfs. Its existence raises the question of whether such objects are really planets (formed within the disks of their hosts) or failed stars (lowmass objects formed by gas fragmentation). This question may ultimately be addressed by comparing disk and bulge/bar planets, which is a goal of the Spitzer microlens program. The host is a G dwarf, M-host = 0.89. +/- 0.07 M-circle dot, and the planet has a semimajor axis a similar to 2.0 au. We use Kepler K2 Campaign 9 microlensing data to break the lens-mass degeneracy that generically impacts parallax solutions from Earth-Spitzer observations alone, which is the first successful application of this approach. The microlensing data, derived primarily from near-continuous, ultradense survey observations from OGLE, MOA, and three KMTNet telescopes, contain more orbital information than for any previous microlensing planet, but not quite enough to accurately specify the full orbit. However, these data do permit the first rigorous test of microlensing orbital-motion measurements, which are typically derived from data taken over < 1% of an orbital period.
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| 2. |
- Mancini, L., et al.
(författare)
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Physical properties and transmission spectrum of the WASP-74 planetary system from multiband photometry
- 2019
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Ingår i: Monthly notices of the Royal Astronomical Society. - : Oxford University Press (OUP). - 0035-8711 .- 1365-2966. ; 485:4, s. 5168-5179
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Tidskriftsartikel (refereegranskat)abstract
- We present broad-band photometry of 11 planetary transits of the hot Jupiter WASP-74 b, using three medium-class telescopes and employing the telescope-defocusing technique. Most of the transits were monitored through I filters and one was simultaneously observed in five optical (U, g', r', i', z') and three near-infrared (J, H, K) passbands, for a total of 18 light curves. We also obtained new high-resolution spectra of the host star. We used these new data to review the orbital and physical properties of the WASP-74 planetary system. We were able to better constrain the main system characteristics, measuring smaller radius and mass for both the hot Jupiter and its host star than previously reported in the literature. Joining our optical data with those taken with the HST in the near infrared, we built up an observational transmission spectrum of the planet, which suggests the presence of strong optical absorbers, as TiO and VO gases, in its atmosphere.
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| 3. |
- Jaimes, R. Figuera, et al.
(författare)
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Many new variable stars discovered in the core of the globular cluster NGC 6715 (M54) with EMCCD observations
- 2016
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Ingår i: Astronomy and Astrophysics. - : EDP Sciences. - 0004-6361 .- 1432-0746. ; 592
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Tidskriftsartikel (refereegranskat)abstract
- Context. We show the benefits of using electron-multiplying CCDs and the shift-and-add technique as a tool to minimise the effects of atmospheric turbulence, such as blending between stars in crowded fields, and to avoid saturated stars in the fields observed. We intend to complete, or improve on, the census of the variable star population in globular cluster NGC 6715. Aims. Our aim is to obtain high-precision time-series photometry of the very crowded central region of this stellar system via the collection of better angular resolution images than has been previously achieved with conventional CCDs on ground-based telescopes. Methods. Observations were carried out using the Danish 1.54-m telescope at the ESO La Silla observatory in Chile. The telescope is equipped with an electron-multiplying CCD that enables short-exposure-time images to be obtained (ten images per second) that were stacked using the shift-and-add technique to produce the normal-exposure-time images (minutes). The high precision photometry was performed via difference image analysis employing the DanDIA pipeline. We attempted automatic detection of variable stars in the field. Results. We statistically analysed the light curves of 1405 stars in the crowded central region of NGC 6715 to automatically identify the variable stars present in this cluster. We found light curves for 17 previously known variable stars near the edges of our reference image (16 RR Lyrae and 1 semi-regular) and we discovered 67 new variables (30 RR Lyrae, 21 irregular (long-period type), 3 semi-regular, 1 W Virginis, 1 eclipsing binary, and 11 unclassified). Photometric measurements for these stars are available in electronic form through the Strasbourg Astronomical Data Centre.
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| 4. |
- Bobbert, Peter A., et al.
(författare)
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Operational Stability of Organic Field-Effect Transistors
- 2012
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 24:9, s. 1146-1158
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Tidskriftsartikel (refereegranskat)abstract
- Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization. However, serious problems remain with the stability of OFETs under operation. The causes for this have remained elusive for many years. Surface potentiometry together with theoretical modeling provide new insights into the mechanisms limiting the operational stability. These indicate that redox reactions involving water are involved in an exchange of mobile charges in the semiconductor with protons in the gate dielectric. This mechanism elucidates the established key role of water and leads in a natural way to a universal stress function, describing the stretched exponential-like time dependence ubiquitously observed. Further study is needed to determine the generality of the mechanism and the role of other mechanisms.
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| 5. |
- Christian Roelofs, W. S., et al.
(författare)
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Fundamental Limitations for Electroluminescence in Organic Dual-Gate Field-Effect Transistors
- 2014
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 26:26, s. 4450-
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Tidskriftsartikel (refereegranskat)abstract
- A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
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| 6. |
- Mathijssen, Simon G. J., et al.
(författare)
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Charge trapping at the dielectric of organic transistors visualized in real time and space
- 2008
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:5, s. 975-
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Tidskriftsartikel (refereegranskat)abstract
- Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
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| 7. |
- Mathijssen, Simon G. J., et al.
(författare)
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Manipulating the local light emission in organic light-emitting diodes by using patterned self-assembled monolayers
- 2008
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:14, s. 2703-
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Tidskriftsartikel (refereegranskat)abstract
- Patterned organic light-emitting diodes are fabricated by using microcontactDrinted self-assembled monolayers on a gold anode (see background figure). Molecules with dipole moments in opposite directions result in an increase or a decrease of the local work function (foreground picture), providing a direct handle on charge injection and enabling local modification of the light emission
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| 8. |
- Mathijssen, Simon G. J., et al.
(författare)
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Monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors
- 2009
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Ingår i: Nature Nanotechnology. - : Nature Publishing Group. - 1748-3387 .- 1748-3395. ; 4:10, s. 674-680
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Tidskriftsartikel (refereegranskat)abstract
- The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by showing that the mobility in liquid crystalline SAMFETs depends exponentially on the channel length only when the monalayer is incomplete. We explain this dependence both numerically and analytically, and show that charge transport is not affected by carrier injection, grain boundaries or conducting island size. At partial coverage, that is when the monolayer is incomplete, liquid-crystalline SAMFETs thus form a unique model system to study size-dependent conductance originating from charge percolation in two dimensions.
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| 9. |
- Mathijssen, Simon G. J., et al.
(författare)
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Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors
- 2010
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 22:45, s. 5105-
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Tidskriftsartikel (refereegranskat)abstract
- The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.
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| 10. |
- Sharma, A., et al.
(författare)
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Bias-stress effect and recovery in organic field effect transistors: Proton migration mechanism
- 2010
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Ingår i: ORGANIC FIELD-EFFECT TRANSISTORS IX. - : Society of Photo-optical Instrumentation Engineers (SPIE). - 9780819482747
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Konferensbidrag (refereegranskat)abstract
- Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric. We propose a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the instabilities in organic transistors. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we explain in detail the recovery of a pres-stressed transistor on applying zero gate bias. We show that recovery dynamics depends strongly on the extent of stressing. Our mechanism is consistent with the known aspects of bias-stress effect like acceleration due to humidity, constant activation energy and reversibility.
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