| 1. |
- Chitica, N, et al.
(författare)
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Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers
- 1999
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Ingår i: Physica scripta. T. - : ROYAL SWEDISH ACAD SCIENCES. - 0281-1847. ; T79, s. 131-134
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Tidskriftsartikel (refereegranskat)abstract
- We report the fabrication of InP/air-gap Fabry-Perot resonant cavities with an improved tunability characteristic achieved through the micromachining of more flexible suspended InP beams. The micromechanical structures are electrostatically actuated. A tuning range of 55 nm is demonstrated for an actuation voltage of 12 V. The low leakage current, of less than 10 µA for a bias of up to 30 V, provides a low actuation power. The tunable air-gap cavities are fabricated by selective wet etching of InGaAs sacrificial layers. An FeCl3 based etchant is used to completely remove the InGaAs material without affecting the thickness of the InP layer. The anisotropy of the etch rate of InGaAs was also investigated and exploited in the micromachining process.
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| 2. |
- Hillmer, H., et al.
(författare)
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Wide continuously tunable 1.55 μm vertical air-cavity wavelength selective elements for filters and VCSELs using micromachined actuation
- 2005
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Ingår i: Opto-Ireland 2005. - : SPIE - International Society for Optical Engineering. - 0819458104 ; , s. 14-28
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Konferensbidrag (refereegranskat)abstract
- Tailored scaling allows the effectiveness of physical effects and mechanical stability to be enhanced. This is shown for micromachined 1.55μm vertical-resonator-based filters and VCSELs, capable of wide, continuous, and kink-free tuning by a single control parameter. Tuning is achieved by mechanically actuating one or several membranes in a vertical air-gap resonator including two highly reflective DBR mirrors. Electrostatically actuatable single-chip filters including InP/air-gap DBR's (3.5 periods) reveal a continuous tuning up to 14% of the absolute wavelength. Varying a reverse voltage (U=0 .. -3.2V) between the membranes (almost flat in the unactuated condition) a tuning range up to 142nm was obtained. Varying a reverse voltage (U=0 .. -28V) between the membranes (strained and curved in the unactuated condition) a tuning range up to 221nm was obtained. Optically pumped and continuously tunable 1.55μm VCSELs show 26nm spectral tuning range, 400μW maximum output power, and 57dBm SMSR. This two-chip VCSEL has a movable top mirror membrane, which is precisely designed to obtain a specific air-gap length and a tailored radius of curvature in order to efficiently support the fundamental optical mode of the plane-concave resonator. The curved top mirror DBR membrane consists of periodically alternating differently stressed silicon nitride and silicon dioxide multilayers. The lower InP-based part consists of the InP/GaInAsP bottom DBR and the GaInAsP active region.
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| 3. |
- Salomonsson, F., et al.
(författare)
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InP-based 1.55ÎŒm Resonant Cavity Light-Emitting Diode with two Epitaxial Mirrors
- 1999
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Ingår i: Physica Scripta T. - 0281-1847. ; 79, s. 135-137
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication and characterisation of a resonant cavity light-emitting diode (RCLED) operating at 1.55 ÎŒm. As compared to conventional LEDs such devices merit from a higher emission intensity with a more narrow linewidth and are therefore promising as light sources in fibre optical communication systems. The present design is based on an InGaAsP multi-quantum well structure and utilises two InGaAsP/InP epitaxial distributed Bragg reflectors (DBRs), one 50 periods high reflectivity bottom mirror and a top out-coupling mirror with lower reflectivity. This gives the advantage of top-emission combined with the possibility of achieving very narrow linewidth. The process is fully monolithic and full wafer scale compatible.
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| 4. |
- Strassner, M, et al.
(författare)
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III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems
- 2000
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Ingår i: SENSORS AND ACTUATORS A-PHYSICAL. - : ELSEVIER SCIENCE SA. - 0924-4247. ; 85:1-3, s. 249-255
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Tidskriftsartikel (refereegranskat)abstract
- In the following payer, we report on the investigation of the mechanical properties of InP grown on InGaAs by organic metal vapor phase epitaxy (OMVPE). When InP is grown, it is stressed due to an unintentional arsenic doping profile. This stress gradient
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| 5. |
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| 6. |
- Tarraf, A., et al.
(författare)
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Continuously tunable 1.55-mu m VCSEL implemented by precisely curved dielectric top DBR involving tailored stress
- 2004
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 16:3, s. 720-722
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Tidskriftsartikel (refereegranskat)abstract
- We present an optically pumped and continuously tunable 1.55-mum vertical-cavity surface-emitting laser (VCSEL). The device shows. 26-mn spectral tuning range, 400-muW maximum output power, and 57-dBm side-mode suppression ratio. The VCSEL is implemented using a two-chip concept. The movable top mirror membrane is precisely designed to obtain a tailored air-gap length (L' = 16 mum) and a radius of curvature (ROC = 4.5 mm) in order to efficiently support the fundamental optical mode of the plane-concave resonator. It consists of a distributed Bragg reflector (DBR) with periodic, differently stressed silicon nitride and silicon dioxide multilayers implemented by plasma-enhanced chemical vapor deposition. The lower InP-based part, comprising the InP-InGaAsP bottom DBR and the active region, is grown monolithicaily using metal-organic vapor phase epitaxy.
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