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- Daon, J., et al.
(författare)
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Chemically enhanced carbon nanotubes based Thermal Interface Materials
- 2015
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Ingår i: THERMINIC 2015 - 21st International Workshop on Thermal Investigations of ICs and Systems 2015. - 9781467397056
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Konferensbidrag (refereegranskat)abstract
- With progress in microelectronics the component density on a device increases drastically. As a consequence the power density reaches levels that challenge device reliability. New heat dissipation strategies are needed to efficiently drain heat. Thermal Interface Materials (TIMs) are usually used to transfer heat across interfaces, for example between a device and its packaging. Vertically Aligned Carbon Nanotubes (VACNTs) can be used to play this role. Indeed, carbon nanotubes are among the best thermal conductors (similar to 3.000 W/mK) and in the form of VACNT mats, show interesting mechanical properties. On one side, VACNTs are in contact with their growth substrate and there is a low thermal resistance. On the other side, good contact must be created between the opposite substrate and the VACNTs in order to decrease the contact thermal resistance. A thin-film deposition of an amorphous material can be used to play this role. This paper reports a chemically enhanced carbon nanotube based TIM with creation of chemical bonds between the polymer and VACNTs. We show that these covalent bonds enhance the thermal transfer from VACNTs to a copper substrate and can dramatically decrease local resistances. Implementation processes and thermal characterizations of TIMs are studied and reported.
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| 2. |
- Daon, J., et al.
(författare)
-
Electrically conductive thermal interface materials based on vertically aligned carbon nanotubes mats
- 2014
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Ingår i: IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 2014. - 9781479954155
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Konferensbidrag (refereegranskat)abstract
- In power microelectronics, the trends towards miniaturization and higher performances result in higher power densities and more heat to be dissipated. In most electronic assembly, thermal interface materials (TIM) help provide a path for heat dissipation but still represent a bottleneck in the total thermal resistance of the system. VA-CNTs mats are typically grown on HR silicon substrate with Al2O3 diffusion barrier layer using Thermal CVD process. In many cases, 'die attach' thermal interface materials need to be electrically conductive and the growth of dense VA-CNT mats on an electrically conductive substrate remains a challenge. This paper presents the growth of dense VA-CNT mats on doped silicon with Al2O3 and TiN diffusion barrier layer. Processes, thermal and electrical characterization of VA-CNTs based thermal interface materials are studied and reported.
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