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1.	Frigerio, Jacopo, et al. (författare) Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics 2021 Ingår i: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 8:12, s. 3573-3582 Tidskriftsartikel (refereegranskat)abstract Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however, the silicon-foundry compatible group IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. Unlike Si-rich epilayers, Ge-rich epilayers allow for waveguiding on a Si substrate. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 μm. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility χ(2) almost reaches 105 pm/V, 4 orders of magnitude larger than bulk nonlinear materials for which, by the Miller's rule, the range of 10 pm/V is the norm.

Frigerio, Jacopo, et al. (författare)
Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics
2021
Ingår i: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 8:12, s. 3573-3582
Tidskriftsartikel (refereegranskat)abstract
- Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however, the silicon-foundry compatible group IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. Unlike Si-rich epilayers, Ge-rich epilayers allow for waveguiding on a Si substrate. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 μm. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility χ(2) almost reaches 105 pm/V, 4 orders of magnitude larger than bulk nonlinear materials for which, by the Miller's rule, the range of 10 pm/V is the norm.

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