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- Yun, Sang Ho, et al.
(författare)
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Effect of quench on crystallinity and alignment of boron nanowires
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:15, s. 2892-2894
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Tidskriftsartikel (refereegranskat)abstract
- Fabrication of aligned single-crystalline boron nanowire (BNW) arrays has been a challenge so far. This motivated us to investigate the effect of quench on the crystallinity and alignment of BNW films made in a thermal vapor transfer process on Au-coated Si substrates. A remarkable improvement in both crystallinity and alignment has been observed in BNW films quenched from processing temperatures greater than or equal to1100 degreesC. Without quench, the BNWs formed in the temperature range of 900-1100 degreesC are heavily tangled with either an amorphous or polycrystalline structure. If higher-temperature (greater than or equal to1100 degreesC) processing is followed by a quench, predominantly single-crystalline BNWs of a rhombohedral structure (a=10.94 A and c=23.83 A) and (031) orientation aligned along the normal of the substrates can be obtained. We speculate that the strain induced along the BNW at large temperature gradient is responsible for the observed quench effect.
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| 3. |
- Yun, Sang Ho, et al.
(författare)
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Growth of boron nano-junctions
- 2006
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5587-5589
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate the synthesis of various types of boron nanowire junctions in a self-assembled manner by simple closed-tube thermal vapor transfer method. The Y-type boron nano-junctions and lateral boron-silicon alloy nano-junctions were grown on Si substrates, based on the oxide assisted VLS growth mode at a relatively low processing temperature regime and the VLS growth mode at the high processing temperature regime, respectively.
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- Yun, Sang Ho, et al.
(författare)
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Growth of inclined boron nanowire bundle arrays in an oxide-assisted vapor-liquid-solid process
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87:11, s. 113109-
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Tidskriftsartikel (refereegranskat)abstract
- In the vapor-liquid-solid process typically employed for semiconductor nanowire growth, nucleation and anisotropic crystal growth of single nanowires are achieved with generation of a solid/liquid alloy interface using metal catalysts. The nucleation and growth mechanism of nanowires may be greatly altered when a second liquid is introduced into the solid/liquid alloy interface. In this work, we demonstrate bundled boron nanowire (BNW) array growth on Au coated Si substrates by introducing a second liquid of B2O3 onto the solid (B)/liquid alloy (Au-B) interface. The BNWs in each bundle are straight but highly inclined with respect to the normal of the substrate. A study of BNW morphology and chemical elemental distribution using electron microscopy and energy dispersive x-ray spectroscopy suggested that the catalyst Au provided the nucleation site for BNW bundles while the liquid B2O3 modified the initiation of BNWs from each nucleation site, resulting in multiple initiation of the BNWs from each site.
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- Yun, Sang Ho, et al.
(författare)
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Self-assembled boron nanowire Y-junctions
- 2006
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 6:3, s. 385-389
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate that boron nanowire Y-junctions can be synthesized in a self-assembled manner by fusing two individual boron nanowires grown inclined toward each other. We show that the presence of a second liquid, in addition to the liquid Au catalyst, is critical to the inclination of the boron nanowire. The structure of the BNYJ arrays that we report here may allow construction of three- or multiple-terminal nanowire devices directly on Si-based readout circuits through controlled nanowire growth.
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