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1.
  • Adell, Martin, et al. (författare)
  • Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
  • 2005
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86, s. 112501-
  • Tidskriftsartikel (refereegranskat)abstract
    • In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
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2.
  • Sadowski, Janusz, et al. (författare)
  • Influence of defects on the lattice constant of GaMnAs
  • 2004
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 69:7
  • Tidskriftsartikel (refereegranskat)abstract
    • We study the influence of the major compensating defects As antisites and Mn interstitials known to occur in the GaMnAs ferromagnetic semiconductor on its structural properties. Our experimental results show that there is a balance between Mn interstitial and As antisite defects, leading to the reduced density of one type of defect upon increasing the density of the other defect. Significant differences in the lattice parameters of GaMnAs with different balances between these two types of defects were observed. The annealing-induced reduction of the GaMnAs lattice constant is inhibited in samples with a large density of As antisites.
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  • Resultat 1-4 av 4

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