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- Chen, M., et al.
(författare)
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A novel diode structure with controlled injection of backside holes (CIBH)
- 2006
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Konferensbidrag (refereegranskat)abstract
- In this paper we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn+ junction and accordingly avoid the avalanche generation at the nn+ junction. The CIBH diode concept provides, compared to diodes without p layers and the same design, significantly improved dynamic ruggedness and improved sott reverse recovery at low current densities. Simulations and results of the first fabricated diodes show the readability of this new promising diode concept.
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- Buchholt, Kristina, et al.
(författare)
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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
- 2012
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Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 343:1, s. 133-137
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.
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