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Sökning: WFRF:(Donnay A)

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1.
  • Axelson, Olav, 1937-, et al. (författare)
  • Regulatory toxicology and pharmacology.
  • 2003
  • Ingår i: International journal of occupational and environmental health. - 1077-3525 .- 2049-3967. ; 9, s. 386-389
  • Tidskriftsartikel (refereegranskat)
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2.
  • Badaroglu, M., et al. (författare)
  • Modeling and experimental verification of substrate noise generation in a 220-Kgates WLAN system-on-chip with multiple supplies
  • 2003
  • Ingår i: IEEE Journal of Solid-State Circuits. - 0018-9200 .- 1558-173X. ; 38:7, s. 1250-1260
  • Tidskriftsartikel (refereegranskat)abstract
    • Substrate noise is a major obstacle for mixed-signal integration. While the power consumption scales linearly with the clock frequency, substrate noise does not have thin scaling due to the resonances in the transfer function of the supply current to the substrate. This paper addresses a practical technique to estimate the substrate noise frequency spectrum of a large mixed-mode System-on-Chip (SoC) with multiple supplies and embedded memories. The results have been verified with substrate noise measurements on a 60-MHz 220-Kgates telecom SoC implemented in a 0.3 mum CMOS process on an EPI-type substrate. We compute a linear chip-level substrate model together with the single-cycle representation of piecewise-linear noise sources of three. supply regions used in this ASIC. Based on this model we accurately estimate the four major resonances in the substrate poise spectrum and their relative magnitudes with 2 dB relative error at the major resonance with respect to measurements. We also present substrate noise measurements at different operating modes of the WLAN receiver. These measurements show that output I/O buffers generate significant substrate noise where an increase of 44% is measured for substrate noise peak-to-peak value due to the additional simultaneous switching of six output I/O buffers with already fully switching datapath and two output I/Os.
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3.
  • Linten, D, et al. (författare)
  • Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors
  • 2005
  • Ingår i: IEEE Journal of Solid-State Circuits. - 0018-9200. ; 40:9, s. 1922-1931
  • Tidskriftsartikel (refereegranskat)abstract
    • Wafer-level packaging (WLP) technology offers novel opportunities for the realization of high-quality on-chip passives needed in RF front-ends. This paper demonstrates a thin-film WLP technology on top of a 90-nm RF CMOS process with one 15-GHz and two low-power 5-GHz voltage-controlled oscillators (VCOs) using a high-quality WLP or above-IC inductor. The 5-GHz VCOs have a power consumption of 0.33 mW and a phase noise of - 115 dBc/Hz and -111 dBc/Hz; at 1-MHz offset, respectively, and the 15-GHz VCO has a phase noise of -105 dBc/Hz at 1-MHz offset with a power consumption of 2.76 mW.
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  • Resultat 1-3 av 3

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