| 1. |
- Kovacs, Andras, et al.
(författare)
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Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs
- 2013
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Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 46:14, s. 7-145309
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Tidskriftsartikel (refereegranskat)abstract
- The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 ◦C. After heat treatment at 400, 560 and 630 ◦C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.
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| 2. |
- Kovacs, Andras, et al.
(författare)
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Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC
- 2015
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Ingår i: ADVANCED MATERIALS INTERFACES. - : Wiley: 12 months. - 2196-7350. ; 2:2
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Tidskriftsartikel (refereegranskat)abstract
- The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self-heating problems in nitride-based high-power electronic and light-emitting optoelectronic devices. In the present study, high-quality GaN layers are grown on patterned graphene layers and 6H-SiC by metalorganic chemical vapor deposition. A periodic pattern of graphene layers is fabricated on 6H-SiC by using polymethyl methacrylate deposition and electron beam lithography, followed by etching using an Ar/O-2 gas atmosphere. Prior to GaN growth, an AlN buffer layer and an Al0.2Ga0.8N transition layer are deposited. The atomic structures of the interfaces between the 6H-SiC and graphene, as well as between the graphene and AlN, are studied using scanning transmission electron microscopy. Phase separation of the Al0.2Ga0.8N transition layer into an AlN and GaN superlattice is observed. Above the continuous graphene layers, polycrystalline defective GaN is rapidly overgrown by better quality single-crystalline GaN from the etched regions. The lateral overgrowth of GaN results in the presence of a low density of dislocations (approximate to 10(9) cm(-2)) and inversion domains and the formation of a smooth GaN surface.
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| 3. |
- Qing, Jian, et al.
(författare)
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Aligned and Graded Type-II Ruddlesden-Popper Perovskite Films for Efficient Solar Cells
- 2018
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Ingår i: Advanced Energy Materials. - : WILEY-V C H VERLAG GMBH. - 1614-6832 .- 1614-6840. ; 8:21
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Tidskriftsartikel (refereegranskat)abstract
- Recently, Ruddlesden-Popper perovskites (RPPs) have attracted increasing interests due to their promising stability. However, the efficiency of solar cells based on RPPs is much lower than that based on 3D perovskites, mainly attributed to their poor charge transport. Herein, a simple yet universal method for controlling the quality of RPP films by a synergistic effect of two additives in the precursor solution is presented. RPP films achieved by this method show (a) high quality with uniform morphology, enhanced crystallinity, and reduced density of sub-bandgap states, (b) vertically oriented perovskite frameworks that facilitate efficient charge transport, and (c) type-II band alignment that favors self-driven charge separation. Consequently, a hysteresis-free RPP solar cell with a power conversion efficiency exceeding 12%, which is much higher than that of the control device (1.5%), is achieved. The findings will spur new developments in the fabrication of high-quality, aligned, and graded RPP films essential for realizing efficient and stable perovskite solar cells.
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| 4. |
- Xu, Weidong, 1988-, et al.
(författare)
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Rational molecular passivation for high-performance perovskite light-emitting diodes
- 2019
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Ingår i: Nature Photonics. - : Springer Nature Publishing AG. - 1749-4885 .- 1749-4893. ; 13:6, s. 418-424
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Tidskriftsartikel (refereegranskat)abstract
- A major efficiency limit for solution-processed perovskite optoelectronic devices, for example light-emitting diodes, is trap-mediated non-radiative losses. Defect passivation using organic molecules has been identified as an attractive approach to tackle this issue. However, implementation of this approach has been hindered by a lack of deep understanding of how the molecular structures influence the effectiveness of passivation. We show that the so far largely ignored hydrogen bonds play a critical role in affecting the passivation. By weakening the hydrogen bonding between the passivating functional moieties and the organic cation featuring in the perovskite, we significantly enhance the interaction with defect sites and minimize non-radiative recombination losses. Consequently, we achieve exceptionally high-performance near-infrared perovskite light-emitting diodes with a record external quantum efficiency of 21.6%. In addition, our passivated perovskite light-emitting diodes maintain a high external quantum efficiency of 20.1% and a wall-plug efficiency of 11.0% at a high current density of 200 mA cm−2, making them more attractive than the most efficient organic and quantum-dot light-emitting diodes at high excitations.
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