| 1. |
- Joffrin, E., et al.
(författare)
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Overview of the JET preparation for deuterium-tritium operation with the ITER like-wall
- 2019
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 59:11
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Forskningsöversikt (refereegranskat)abstract
- For the past several years, the JET scientific programme (Pamela et al 2007 Fusion Eng. Des. 82 590) has been engaged in a multi-campaign effort, including experiments in D, H and T, leading up to 2020 and the first experiments with 50%/50% D-T mixtures since 1997 and the first ever D-T plasmas with the ITER mix of plasma-facing component materials. For this purpose, a concerted physics and technology programme was launched with a view to prepare the D-T campaign (DTE2). This paper addresses the key elements developed by the JET programme directly contributing to the D-T preparation. This intense preparation includes the review of the physics basis for the D-T operational scenarios, including the fusion power predictions through first principle and integrated modelling, and the impact of isotopes in the operation and physics of D-T plasmas (thermal and particle transport, high confinement mode (H-mode) access, Be and W erosion, fuel recovery, etc). This effort also requires improving several aspects of plasma operation for DTE2, such as real time control schemes, heat load control, disruption avoidance and a mitigation system (including the installation of a new shattered pellet injector), novel ion cyclotron resonance heating schemes (such as the three-ions scheme), new diagnostics (neutron camera and spectrometer, active Alfven eigenmode antennas, neutral gauges, radiation hard imaging systems...) and the calibration of the JET neutron diagnostics at 14 MeV for accurate fusion power measurement. The active preparation of JET for the 2020 D-T campaign provides an incomparable source of information and a basis for the future D-T operation of ITER, and it is also foreseen that a large number of key physics issues will be addressed in support of burning plasmas.
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| 2. |
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| 3. |
- Bombarda, F., et al.
(författare)
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Runaway electron beam control
- 2019
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Ingår i: Plasma Physics and Controlled Fusion. - : IOP Publishing. - 1361-6587 .- 0741-3335. ; 61:1
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Tidskriftsartikel (refereegranskat)
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| 4. |
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| 5. |
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| 6. |
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- 2018
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 58:1
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Forskningsöversikt (refereegranskat)
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| 7. |
- Jeppson, Kjell, 1947, et al.
(författare)
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Test structures for studying flexible interconnect supported by carbon nanotube scaffolds
- 2017
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Ingår i: IEEE International Conference on Microelectronic Test Structures. ; 2017
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Konferensbidrag (refereegranskat)abstract
- Due to their flexibility and compatibility withsilicon devices, the use of carbon nanotubes as scaffolds for metal interconnect in flexible and wearable electronics has been proposed. This paper examines the performance of dual-height carbon nanotubes as flexible scaffolds for horizontal and vertical interconnects. For this purpose, a number of test structures have been designed and fabricated and their electrical and mechanical performance been investigated.
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| 8. |
- Jiang, Di, 1983, et al.
(författare)
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A flexible and stackable 3D interconnect system using growth-engineered carbon nanotube scaffolds
- 2017
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Ingår i: Flexible and Printed Electronics. - : IOP Publishing. - 2058-8585. ; 2:2
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Tidskriftsartikel (refereegranskat)abstract
- One of the critical challenges for realizing flexible electronic systems for a wide range of applications is the development of materials for flexible and stackable interconnects. We propose and demonstrate a three-dimensional (3D)interconnect structure embedded in a polymeric substrate using metal-coated carbon nanotube (CNT)scaffolds. By using two different underlayer materials for the catalyst, onestep synthesis of a dual-height CNT interconnect scaffold was realized. The CNT scaffolds serve as flexible cores for both annular metal through-substrate-vias and for horizontal metal interconnect. The 3D-CNT network was fabricated on a silicon substrate, and once the scaffolds were covered by metal, they were embedded in a polymer serving as a flexible substrate after peel-off from the silicon substrate. The 3D-CNT interconnect network was exposed to mechanical bending and stretching tests while monitoring its electrical properties. Even after 300 cycles no significant increase of resistances was found. Electrically there is a trade-off between flexibility and conductivity due to the surface roughness of the scaffold. However, this is to some extent alleviated by the metalized sidewalls giving the horizontal wires a cross-sectional area larger than indicated by their footprint. For gold wires 200 nm thick, measurements indicated a resistivity of 18 μΩ.cm, a value less than one order of magnitude larger than that of bulk gold, and a value that is expected to improve as technology improves. The mechanical properties of the metalized scaffolds were simulated using a finite element model. The potential scale-up capability of the proposed 3D-CNT network was demonstrated by the stacking of two such polymer-embedded interconnect systems.
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| 9. |
- Mu, Wei, 1985, et al.
(författare)
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Controllable and fast synthesis of bilayer graphene by chemical vapor deposition on copper foil using a cold wall reactor
- 2016
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Ingår i: Chemical Engineering Journal. - : Elsevier BV. - 1385-8947. ; 304:15 November 2016, s. 106-114
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Tidskriftsartikel (refereegranskat)abstract
- Bilayer graphene is attractive for digital device applications due to the appearance of a bandgap under application of an electrical displacement field. Controllable and fast synthesis of bilayer graphene on copper by chemical vapor deposition is considered a crucial process from the perspective of industrial applications. Here, a systematic investigation of the influence of process parameters on the growth of bilayer graphene by chemical vapor deposition in a low pressure cold wall reactor is presented. In this study, the initial process stages have been of particular interest. We have found that the influence of the hydrogen partial pressure on synthesis is completely the opposite from that found for traditional tubular quartz CVD in terms of its influence on the graphene growth rate. H2/CH4 ratio was also found to effectively influence the properties of the synthesized bilayer graphene in terms of its atomic structure, whether it be AB-stacked or misoriented. Different pre-treatments of the copper foil, in combination with different annealing processes, were used to investigate the nucleation process with the aim of improving the controllability of the synthesis process. Based on an analysis of the nucleation activity, adsorption-diffusion and gas-phase penetration were employed to illustrate the synthesis mechanism of bilayer graphene on copper foil. After optimization of the synthesis process, large areas, up to 90% of a copper foil, were covered by bilayer graphene within 15 minutes. The total process time is only 45 minutes, including temperature ramp-up and cool-down by using a low pressure cold wall CVD reactor.
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| 10. |
- Mu, Wei, 1985, et al.
(författare)
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Double-Densified VerticallyAligned Carbon Nanotube Bundles for Application in 3D Integration High Aspect Ratio TSV Interconnects
- 2016
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Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781509012046 ; 2016-August, s. 211-216
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Konferensbidrag (refereegranskat)abstract
- The treatment of densification by vapor on pristineMWCNT bundles are necessary to improve the effective area of the CNT TSV. However, the CNT bundles might tilt partly because of the non-uniform densification at root of the bundle, especially when it comes to the high aspect ratio CNT bundles. In order to solve these problems, a double densification process has been proposed and developed here. First of all, the shape of partial densified CNT bundles were optimized as a function of time. After several steps such as transferring of partial densified CNT bundles into the via, second densification, epoxy filling and chemical mechanical polishing, the CNT filled TSV with aspect ratio of 10 was achieved. The current voltage response of the CNT TSV interconnection indicated good electrical connection was formed. The resistivity of CNT bundles in via was calculated to be around 2-3 milli-ohmcm.
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