| 1. |
- Chua, C., et al.
(författare)
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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
- 2014
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:6, s. 3369-3373
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Tidskriftsartikel (refereegranskat)abstract
- We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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| 2. |
- Lara Avila, Samuel, 1983, et al.
(författare)
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Influence of Impurity Spin Dynamics on Quantum Transport in Epitaxial Graphene
- 2015
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Ingår i: Physical Review Letters. - : AMER PHYSICAL SOC. - 1079-7114 .- 0031-9007. ; 115:10, s. 106602-
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Tidskriftsartikel (refereegranskat)abstract
- Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localization analysis, is suppressed by an in-plane magnetic field B-parallel to, and thereby proving that it is caused at least in part by spinful scatterers. A nonmonotonic dependence of the effective decoherence rate on B-parallel to reveals the intricate role of the scatterers' spin dynamics in forming the interference correction to the conductivity, an effect that has gone unnoticed in earlier weak localization studies.
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| 3. |
- Lara Avila, Samuel, 1983, et al.
(författare)
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Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
- 2011
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 23:7, s. 878-
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Tidskriftsartikel (refereegranskat)abstract
- A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.
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| 4. |
- de Jong, Yde, et al.
(författare)
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PESI - a taxonomic backbone for Europe
- 2015
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Ingår i: Biodiversity Data Journal. - 1314-2836 .- 1314-2828. ; 3, s. 1-51
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Tidskriftsartikel (refereegranskat)abstract
- Reliable taxonomy underpins communication in all of biology, not least nature conservation and sustainable use of ecosystem resources. The flexibility of taxonomic interpretations, however, presents a serious challenge for end-users of taxonomic concepts. Users need standardised and continuously harmonised taxonomic reference systems, as well as high-quality and complete taxonomic data sets, but these are generally lacking for non-specialists. The solution is in dynamic, expertly curated web-based taxonomic tools.The Pan-European Species-directories Infrastructure (PESI) worked to solve this key issue by providing a taxonomic e-infrastructure for Europe. It strengthened the relevant social (expertise) and information (standards, data and technical) capacities of five major community networks on taxonomic indexing in Europe, which is essential for proper biodiversity assessment and monitoring activities. The key objectives of PESI were: 1) standardisation in taxonomic reference systems, 2) enhancement of the quality and completeness of taxonomic data sets and 3) creation of integrated access to taxonomic information.This paper describes the results of PESI and its future prospects, including the involvement in major European biodiversity informatics initiatives and programs.
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| 5. |
- Garcia-Ruiz, Aitor, et al.
(författare)
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Electronic Raman Scattering in Twistronic Few-Layer Graphene
- 2020
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Ingår i: Physical Review Letters. - 1079-7114 .- 0031-9007. ; 125:19
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Tidskriftsartikel (refereegranskat)abstract
- We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of the Dirac states, and the other resulting from band folding caused by moiré superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for noninvasive characterization of the twist, even in hBN-encapsulated structures.
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| 6. |
- Lara Avila, Samuel, 1983, et al.
(författare)
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Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements
- 2011
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 107:16, s. 166602-
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Tidskriftsartikel (refereegranskat)abstract
- We have performed magnetotransport measurements on monolayer epitaxial graphene and analyzed them in the framework of the disordered Fermi liquid theory. We have separated the electron-electron and weak-localization contributions to resistivity and demonstrated the phase coherence over a micrometer length scale, setting the limit of at least 50 ps on the spin relaxation time in this material.
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| 7. |
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| 8. |
- Tzalenchuk, Alexander, et al.
(författare)
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Engineering and metrology of epitaxial graphene
- 2011
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Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 151:16, s. 1094-1099
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Tidskriftsartikel (refereegranskat)abstract
- ere we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.
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| 9. |
- Tzalenchuk, Alexander, et al.
(författare)
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Towards a quantum resistance standard based on epitaxial graphene
- 2010
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Ingår i: NATURE NANOTECHNOLOGY. - : Springer Science and Business Media LLC. - 1748-3387 .- 1748-3395. ; 5:3, s. 186-189
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Tidskriftsartikel (refereegranskat)abstract
- The quantum Hall effect(1) allows the international standard for resistance to be defined in terms of the electron charge and Plancks constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of R-K = h/e(2) = 25 812.807 557(18) Omega, the resistance quantum(2). Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology-a few parts per billion-has been achieved only in silicon and III-V heterostructure devices(3-5). Graphene should, in principle, be an ideal material for a quantum resistance standard(6), because it is inherently two-dimensional and its discrete electron energy levels in a magnetic field (the Landau levels(7)) are widely spaced. However, the precisions demonstrated so far have been lower than one part per million(8). Here, we report a quantum Hall resistance quantization accuracy of three parts per billion in monolayer epitaxial graphene at 300 mK, four orders of magnitude better than previously reported. Moreover, by demonstrating the structural integrity and uniformity of graphene over hundreds of micrometres, as well as reproducible mobility and carrier concentrations across a half-centimetre wafer, these results boost the prospects of using epitaxial graphene in applications beyond quantum metrology.
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