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- Fedorets, Dmytro, 1976, et al.
(författare)
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Quantum shuttle phenomena in a nanoelectromechanical single-electron transistor
- 2004
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 92
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Tidskriftsartikel (refereegranskat)abstract
- An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunneling length is much greater than the amplitude of the zero point oscillations of the central island. It is shown that when the dissipation is below a certain threshold value, the vibrational ground state of the central island is unstable. The steady state into which this instability develops is studied. It is found that if the electric field E between the leads is much greater than a characteristic value E-q, the quasiclassical shuttle picture is recovered, while if E0) shuttle vibrations.
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| 5. |
- Gorelik, Leonid, 1952, et al.
(författare)
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Spin-controlled nanoelectromechanics in magnetic NEM-SET systems
- 2005
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 7
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Tidskriftsartikel (refereegranskat)abstract
- We present a theory of the nanoelectromechanical coupling in a magnetic nanoelectromechanical single-electron tunnelling (NEM-SET) device, where a nanometre-sized metallic cluster or 'dot' is suspended between two magnetic leads. In this device, the spin projections of the tunnelling electrons, which can be manipulated by an external magnetic field, control the strength of the tunnel current. The magnitude of the current, in turn, determines the power that can be supplied to the vibrational degree of freedom of the suspended cluster. The electromechanical instability that occurs in the system if the dissipation rate of the mechanical cluster vibration energy is slow enough, is shown to strongly depend on the external magnetic field. As a result different regimes of 'shuttle' vibrations appear and are analysed. The strength of the magnetic field required to control the nanomechanical vibrations decreases as the tunnel resistance of the device increases and can be as low as 10 gauss for gigaohm tunnel structures.
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