| 1. |
- Chehrenegar, Pirooz, 1964, et al.
(författare)
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Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
- 2011
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Ingår i: 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011. - 9781457706493
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Konferensbidrag (refereegranskat)abstract
- In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
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| 2. |
- Felbinger, Jonathan, 1984, et al.
(författare)
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Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs
- 2011
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 32:7, s. 889-891
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Tidskriftsartikel (refereegranskat)abstract
- The growth, fabrication, and performance of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a total barrier thickness of 7 nm are reported. An optimized surface passivation and an Ohmic recess etch yield HEMTs exhibiting 0.72 S/mm peak extrinsic DC transconductance at a current density of 0.47 A/mm. Devices with a gate length of 90 nm achieve 78 GHz unity-current-gain frequency and up to 166 GHz maximum frequency of oscillation. The minimum noise figure at 10 GHz is 0.52 dB with an associated gain of 9.5 dB.
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| 3. |
- Zirath, Herbert, 1955, et al.
(författare)
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An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator
- 2011
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Ingår i: 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011. - 1550-8781. - 9781612847122
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Konferensbidrag (refereegranskat)abstract
- An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate in an 'in-house process' at Chalmers University of Technology.
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