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Sökning: WFRF:(Feldbach E.)

  • Resultat 1-6 av 6
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1.
  • Assylbayev, R., et al. (författare)
  • Defect-related luminescence of MgO single crystals irradiated with swift 132Xe ions
  • 2022
  • Ingår i: Optical Materials. - : Elsevier BV. - 0925-3467. ; 127
  • Tidskriftsartikel (refereegranskat)abstract
    • Low-temperature cathodo- and photoluminescence connected with the F and F+ centers (oxygen vacancies in different charge states) and bivacancies have been investigated in MgO single crystals preliminarily irradiated by 230-MeV 132Xe ions with varying fluence (up to 1014 ions/cm2). The cathodoluminesence bands (result of decomposition into Gaussians) related to the F, F+ and P centers have intensified with Xe-irradiation fluence up to Φ = 1013 ions/cm2, while drastic emission attenuation in a whole spectral region occurs at higher fluences. The limitations of the use of luminescence methods for the detection of structural point defects induced by heavy irradiation have been considered.
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2.
  • Feldbach, E., et al. (författare)
  • Low-temperature irradiation effects in lithium orthosilicates
  • 2006
  • Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. - : Elsevier BV. - 0168-583X. ; 250, s. 159-163
  • Konferensbidrag (refereegranskat)abstract
    • The emission spectra of lithium orthosilicates (Li4SiO4) ceramics have been measured in the range of 1.8-5.8 eV under irradiation by 6-30 eV photons or 1-30 keV electrons at 6-300 K. The tunnel recombination phosphorescence, as well as luminescence, stimulated by 1.5-2.5 eV photons has been detected in the sample preliminarily irradiated at 6 or 80 K. The main peaks of thermally stimulated luminescence (TSL) in the irradiated ceramics have been observed at 72, 118 and 265 K. The creation spectra of the 118 K TSL peak, as well as the excitation spectrum of photostimulated luminescence (PSL) span the region of the intrinsic absorption of a lithium orthosilicate (9-30 eV). The intensity of PSL and the TSL peaks in Li4SiO4 ceramics prepared in hydrogen/argon atmosphere is several times lower than that in the mainly investigated Li4SiO4 ceramics prepared in the atmosphere of dry argon. The optical characteristics of Li4SiO4 are compared with the ones known for Li2O and SiO2. Low-temperature luminescent methods are promising for the investigation of electron-hole processes and radiation defects serving as the traps for tritium released in D-T fusion reactor blanket systems. (c) 2006 Elsevier B.V. All rights reserved.
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3.
  • Kikas, A., et al. (författare)
  • Resonant inelastic x-ray scattering and UV-VUV luminescence at the Be 1s edge in BeO
  • 2010
  • Ingår i: Journal of Physics: Condensed Matter. - : IOP Publishing. - 1361-648X .- 0953-8984. ; 22:37
  • Tidskriftsartikel (refereegranskat)abstract
    • We carried out a combined study of UV-VUV luminescence and resonant x-ray emission from BeO single crystals with incident photon energies in the vicinity of the Be 1s absorption edge. The x-ray emission spectra show that at the Be 1s photoabsorption edge the lattice relaxation processes in the excitation site take place already on the timescale of the radiative decay of the core excitation. Comparison of the x-ray emission and the luminescence spectra indicates that the maximum energy loss of the process of lattice relaxation during the decay of inner-shell holes is similar to the loss that occurs in the self-trapping process of valence excitons. The possible decay channels of core excitations have been discussed and the mechanism for the creation of 5.2 eV luminescence at the photoabsorption resonances has been suggested.
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5.
  • Nagirnyi, V, et al. (författare)
  • Energy transfer in ZnWO4 and CdWO4 scintillators
  • 2002
  • Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - 0167-5087. ; 486:1-2, s. 395-398
  • Tidskriftsartikel (refereegranskat)abstract
    • A systematic spectroscopic study of oriented single ZnWO4 crystals was performed using UV and synchrotron excitation. Emission and phosphorescence spectra in the energy region 1-4 eV as well as reflection spectra and excitation spectra of various emissions and phosphorescence in the energy region 3.5-32eV were studied at 4.2-300K using synchrotron radiation. The results are compared to those available for CdWO4. The peculiarities of the band structure and those of excitonic and electron-hole processes in the systems investigated are discussed.
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6.
  • Romet, I., et al. (författare)
  • Interconfigurational d-f luminescence of Pr3+ ions in praseodymium doped Li6Y(BO3)3 single crystals
  • 2024
  • Ingår i: Journal of Luminescence. - 0022-2313. ; 265
  • Tidskriftsartikel (refereegranskat)abstract
    • Luminescence properties of undoped Li6Y(BO3)3 (LYB) crystals grown by the Bridgman method as well as undoped and praseodymium doped LYB crystals grown by the Czochralski method were studied under excitation by ultraviolet light, synchrotron radiation and electron beam in the temperature region of 5–300 K. The emission bands peaking at 4.8, 3.76 and 2.95 eV were found in undoped Czochralski-grown crystals, while the band at 3.34 eV was dominant in the Bridgman-grown crystals. These bands are presumably ascribed to excitons localized at regular and defect-perturbed lattice sites. Intense emission bands peaking at 4.75, 4.50, 4.17 and 3.98 eV were discovered in Pr doped crystals at low temperatures and related to the interconfigurational 4f15d1 → 4f2 radiative transitions in Pr3+ ions. The structure of the emission spectrum is shown to be determined by the 3H4, 3H5, 3H6, 3F2, 3F3, 3F4 terms of the Pr3+ ion. The characteristic decay time of the 4f15d1 → 4f2 emission is τ = 24 ns at low temperatures, however, it shortens to 9 ns by room temperature due to a strong thermal quenching. The study of glow curves and spectra of thermostimulated luminescence in Li6Y(BO3)3:Pr crystal irradiated by 10-keV electron beam shows that Pr3+ ions do not participate in an electron-hole recombination process.
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