| 1. |
- Fian, Alexander, et al.
(author)
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New Flexible Toolbox for Nanomechanical Measurements with Extreme Precision and at Very High Frequencies.
- 2010
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:Online August 26, 2010, s. 3893-3898
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Journal article (peer-reviewed)abstract
- We show that the principally two-dimensional (2D) scanning tunneling microscope (STM) can be used for imaging of 1D micrometer high free-standing nanowires. We can then determine nanowire megahertz resonance frequencies, image their top-view 2D resonance shapes, and investigate axial stress on the nanoscale. Importantly, we demonstrate the extreme sensitivity of electron tunneling even at very high frequencies by measuring resonances at hundreds of megahertz with a precision far below the angstrom scale.
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| 2. |
- Timm, Rainer, et al.
(author)
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Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
- 2013
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:11, s. 5182-5189
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Journal article (peer-reviewed)abstract
- Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.
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| 3. |
- Timm, Rainer, et al.
(author)
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Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
- 2011
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 88, s. 1091-1094
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Conference paper (peer-reviewed)abstract
- We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction of the surface.
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| 4. |
- Timm, Rainer, et al.
(author)
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Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
- 2011
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:22, s. 1-222907
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Journal article (peer-reviewed)abstract
- Abstract in UndeterminedVertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.
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| 5. |
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