| 1. |
- Abelev, B., et al.
(author)
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Technical Design Report for the Upgrade of the ALICE Inner Tracking System
- 2014
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In: Journal of Physics G: Nuclear and Particle Physics. - : IOP Publishing. - 0954-3899 .- 1361-6471. ; 41:8
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Journal article (peer-reviewed)abstract
- LICE (A Large Ion Collider Experiment) is studying the physics of strongly interacting matter, and in particular the properties of the Quark–Gluon Plasma (QGP), using proton–proton, proton–nucleus and nucleus–nucleus collisions at the CERN LHC (Large Hadron Collider). The ALICE Collaboration is preparing a major upgrade of the experimental apparatus, planned for installation in the second long LHC shutdown in the years 2018–2019. A key element of the ALICE upgrade is the construction of a new, ultra-light, high-resolution Inner Tracking System (ITS) based on monolithic CMOS pixel detectors. The primary focus of the ITS upgrade is on improving the performance for detection of heavy-flavour hadrons, and of thermal photons and low-mass di-electrons emitted by the QGP. With respect to the current detector, the new Inner Tracking System will significantly enhance the determination of the distance of closest approach to the primary vertex, the tracking efficiency at low transverse momenta, and the read-out rate capabilities. This will be obtained by seven concentric detector layers based on a 50 μm thick CMOS pixel sensor with a pixel pitch of about 30×30 μm2. This document, submitted to the LHCC (LHC experiments Committee) in September 2013, presents the design goals, a summary of the R&D activities, with focus on the technical implementation of the main detector components, and the projected detector and physics performance.
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| 2. |
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| 3. |
- Sumaila, U. Rashid, et al.
(author)
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WTO must ban harmful fisheries subsidies
- 2021
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In: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 374:6567, s. 544-544
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Journal article (other academic/artistic)
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| 4. |
- Roccaforte, F., et al.
(author)
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Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
- 2022
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In: Applied Surface Science. - : ELSEVIER. - 0169-4332 .- 1873-5584. ; 606
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Journal article (peer-reviewed)abstract
- In this paper, we demonstrate the feasibility of fabricating vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) material obtained by combining sublimation epitaxy and chemical vapor deposition, starting from 4 degrees -off axis 4H-SiC. First, the good quality of the epilayers grown with this method was demonstrated by morphological and structural analyses. Then, fabricated vertical Pt/3C-SiC Schottky diodes exhibited an ideality factor of 1.21 and a barrier height of 0.6 eV, as determined by thermionic emission model. The temperature dependent forward current analysis indicated the formation of an inhomogeneous barrier, which has been related with the presence of conductive surface defects, detected by nanoscale local current measurements. On the other hand, the reverse leakage current could be described by thermionic field emission model, including image force lowering. These findings demonstrate the viability of the proposed approach for bulk 3C-SiC growth for device fabrication. The material quality and the feasibility of fabricating vertical diodes based on 3C-SiC with a low barrier pave the way for the application of this polytype for medium-voltage power devices.
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| 5. |
- Giannazzo, F., et al.
(author)
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Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)
- 2013
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In: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. ; , s. 113-116
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Conference paper (peer-reviewed)abstract
- Two dimensional maps of the electronic conductance in epitaxial graphene (EG) grown on SiC were obtained by conductive atomic force microscopy (CAFM). The correlation between morphological and electrical maps revealed the local conductance degradation in EG over the SiC substrate steps or at the junction between monolayer (1L) and bilayer (2L) graphene regions. The effect of steps strongly depends on the charge transfer phenomena between the step sidewall and graphene, whereas the resistance increase at 1L/2L junction is a purely quantum mechanical effect, due to the weak coupling between 1L and 2L electron wavefunctions.
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| 6. |
- De Rosa, G., et al.
(author)
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Velocity-resolved Reverberation Mapping of Five Bright Seyfert 1 Galaxies
- 2018
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In: Astrophysical Journal. - : American Astronomical Society. - 0004-637X .- 1538-4357. ; 866:2
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Journal article (peer-reviewed)abstract
- We present the first results from a reverberation-mapping campaign undertaken during the first half of 2012, with additional data on one active galactic nucleus (AGN) (NGC 3227) from a 2014 campaign. Our main goals are (1) to determine the black hole masses from continuum-H beta reverberation signatures, and (2) to look for velocity-dependent time delays that might be indicators of the gross kinematics of the broad-line region. We successfully measure H beta time delays and black hole masses for five AGNs, four of which have previous reverberation mass measurements. The values measured here are in agreement with earlier estimates, though there is some intrinsic scatter beyond the formal measurement errors. We observe velocity-dependent H beta lags in each case, and find that the patterns have changed in the intervening five years for three AGNs that were also observed in 2007.
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| 7. |
- Giannazzo, F., et al.
(author)
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Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
- 2019
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In: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 30:28
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Journal article (peer-reviewed)abstract
- In this paper, micro-Raman mapping and conductive atomic force microscopy (C-AFM) were jointly applied to investigate the structural and electrical homogeneity of quasi-free-standing monolayer graphene (QFMLG), obtained by high temperature decomposition of 4H-SiC(0001) followed by hydrogen intercalation at 900 degrees C. Strain and doping maps, obtained by Raman data, showed the presence of sub-micron patches with reduced hole density correlated to regions with higher compressive strain, probably associated with a locally reduced hydrogen intercalation. Nanoscale resolution electrical maps by C-AFM also revealed the presence of patches with enhanced current injection through the QFMLG/SiC interface, indicating a locally reduced Schottky barrier height (Phi(B)). The Phi(B) values evaluated from local I-V curves by the thermionic emission model were in good agreement with the values calculated for the QFMLG/SiC interface using the Schottky-Mott rule and the graphene holes density from Raman maps. The demonstrated approach revealed a useful and non-invasive method to probe the structural and electrical homogeneity of QFMLG for future nano-electronics applications.
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