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Making a Difference : Rethinking Humanism and the Humanities
- 2011
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Samlingsverk (redaktörskap) (övrigt vetenskapligt/konstnärligt)abstract
- Making a Difference: Rethinking Humanism and the Humanities is a collection of fourteen conference papers written in response to a call for new ways of thinking about the humanities within an academic system in transformation. A guiding principle of the conference was to allow the arts - film in particular - to have a voice in the process of possible reorientation. The unifying theme is the continual reconsideration of its own aims, purposes, practices and critical potential as the most salient characteristic of humanist thinking, something which is ultimately up to each individual to work out for herself, as the various responses to our call in this volume testify.
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| 2. |
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Tankar
- 2008
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Samlingsverk (redaktörskap) (övrigt vetenskapligt/konstnärligt)
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| 3. |
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| 4. |
- Albert, Malin, et al.
(författare)
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Hospitalized patients’ attitudes towards participating in a randomized control trial in case of a cardiac arrest
- 2024
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Ingår i: Resuscitation Plus. - 2666-5204. ; 18
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Tidskriftsartikel (refereegranskat)abstract
- BackgroundNo previous study has evaluated patients attitudes towards inclusion in an ongoing cardiac arrest clinical trial. The aim of this study was to assess patientś willingness and motives to participate in the ongoing randomized controlled drug trial “Vasopressin and Steroids in addition to Adrenaline in cardiac arrest” (VAST-A trial) in case of an in-hospital cardiac arrest (IHCA).ObjectivesHospitalized patients, men ≥ 18 and women ≥ 50 years, were asked for informed consent for inclusion in the VAST-A trial in case of an IHCA, the reason for approving or declining inclusion in the trial and baseline characteristics.MethodsPatients admitted to hospital were asked to give informed consent of inclusion in VAST-A in case of an IHCA during their hospital stay. Patients were also asked why they approved or declined inclusion as well as baseline characteristics questions.Results1,064 patients were asked about willingness to participate in the VAST-A trial, of these 902 (84.8%) patients approved inclusion. A subgroup of 411 patients were, except willingness, also asked about motives to participate or not and basic characteristics. The main reason for approving inclusion was to contribute to research (n = 328, 83.9%). The main reason for declining inclusion was concerns regarding testing the drug treatment (n = 6, 30%).ConclusionAmong hospitalized patients the vast majority gave informed consent to inclusion in an ongoing randomized cardiac arrest drug trial. The main reason for approving inclusion was to contribute to research.
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| 5. |
- Bergh, M, et al.
(författare)
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Silicon surfaces for hydrophobic wafer bonding
- 1997
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Ingår i: Proc of the Fourth International Symosium on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society Proceedings Vol 97-36. ; , s. 87-94, s. 87-94
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Konferensbidrag (refereegranskat)
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| 6. |
- Bergsten, Johan, 1988, et al.
(författare)
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AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
- 2016
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Ingår i: Japanese Journal of Applied Physics. - : IOP Publishing. - 1347-4065 .- 0021-4922. ; 55:5
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Tidskriftsartikel (refereegranskat)abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 x 10(-6)A/mu m, breakdown fields of 70V/mu m, and low drain induced barrier lowering of 0.13mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs. (C) 2016 The Japan Society of Applied Physics
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| 7. |
- Bergsten, Johan, et al.
(författare)
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AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
- 2016
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Ingår i: Japanese Journal of Applied Physics. - : Institute of Physics Publishing (IOPP). - 0021-4922 .- 1347-4065. ; 55, s. 05FK02-1-05FK02-4
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Tidskriftsartikel (refereegranskat)abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.
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| 8. |
- Bergsten, Johan, et al.
(författare)
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Impact of AlGaN/GaN interface sharpness on HEMT performance
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The impact of the design and sharpness of the AlGaN/GaN interface in GaN-based HEMTs is investigated. Three structures with different AlGaN/GaN interface properties were grown with hot-wall MOCVD. One structure has a 2-nmthick AlN exclusion layer in between the AlGaN and the GaN, while the other two differ in their sharpness of the Al transition at the AlGaN/GaN interface. The structures with AlN exclusion layer and optimized sharpness of the interface show similar electron mobilities (1760 and 1740 cm2/Vs). HEMTs were processed and evaluated. Gated Hall-measurements indicate that the sharper interface maintains a higher mobility when the electrons are close to the interface compared both to the AlNexclusion layer and the non-optimized structure. The higher mobility manifests as lower parasitic resistance yielding better DC and high frequency performance. Pulsed IV measurements indicate that the sharper interface provide less dispersive effects compared both to the AlN exclusion layer and the optimized interface.
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| 9. |
- Bergsten, Johan, et al.
(författare)
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Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process
- 2016
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9383 .- 1557-9646. ; 63:1, s. 333-338
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Tidskriftsartikel (refereegranskat)abstract
- The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized AlGaN/GaN interface and another with an unoptimized, were grown using hot-wall metal-organic chemical vapor deposition. The structure with optimized sharpness of the interface shows electron mobility of 1760 cm(2)/V . s as compared with 1660 cm(2)/V . s for the nonoptimized interface. Gated Hall measurements indicate that the sharper interface maintains higher mobility when the electrons are close to the interface compared with the nonoptimized structure, indicating less scattering due to alloy disorder and interface roughness. HEMTs were processed and evaluated. The higher mobility manifests as lower parasitic resistance yielding a better dc and high-frequency performance. A small-signal equivalent model is extracted. The results indicate a lower electron penetration into the buffer in the optimized sample. Pulsed-IV measurements imply that the sharper interface provides less dispersive effects at large drain biases. We speculate that the mobility enhancement seen AlGaN/AlN/GaN structures compared with the AlGaN/GaN case is not only related to the larger conduction band offset but also due to a more welldefined interface minimizing scattering due to alloy disorder and interface roughness.
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| 10. |
- Bergsten, Johan, 1988, et al.
(författare)
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Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process
- 2016
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 63:1, s. 333-338
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Tidskriftsartikel (refereegranskat)abstract
- The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized AlGaN/GaN interface and another with an unoptimized, were grown using hot-wall metal-organic chemical vapor deposition. The structure with optimized sharpness of the interface shows electron mobility of 1760 cm(2)/V . s as compared with 1660 cm(2)/V . s for the nonoptimized interface. Gated Hall measurements indicate that the sharper interface maintains higher mobility when the electrons are close to the interface compared with the nonoptimized structure, indicating less scattering due to alloy disorder and interface roughness. HEMTs were processed and evaluated. The higher mobility manifests as lower parasitic resistance yielding a better dc and high-frequency performance. A small-signal equivalent model is extracted. The results indicate a lower electron penetration into the buffer in the optimized sample. Pulsed-IV measurements imply that the sharper interface provides less dispersive effects at large drain biases. We speculate that the mobility enhancement seen AlGaN/AlN/GaN structures compared with the AlGaN/GaN case is not only related to the larger conduction band offset but also due to a more welldefined interface minimizing scattering due to alloy disorder and interface roughness.
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