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Träfflista för sökning "WFRF:(Fu Chaochao) "

Sökning: WFRF:(Fu Chaochao)

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1.
  • Fan, Jianming, et al. (författare)
  • Hydrothermal-assisted synthesis of Li-rich layered oxide microspheres with high capacity and superior rate-capability as a cathode for lithium-ion batteries
  • 2015
  • Ingår i: Electrochimica Acta. - 0013-4686. ; 173, s. 7-16
  • Tidskriftsartikel (refereegranskat)abstract
    • Li-rich layered oxide materials possess high voltage and high specific capacity, which makes them attractive cathode candidates for lithium-ion batteries. However, they still suffer from a poor rate capability, which seriously blocks their widespread practical applications. In this work, Li(Li0.167Mn0.5Co0.167Ni0.167)O2 microspheres were synthesized by a hydrothermal-assisted method, in which Ni-Co-Mn-based microspherical precursors obtained by a hydrothermal process with polyethylene glycol-600 (PEG-600) as a surfactant were mixed with lithium sources and then sintered to yield the final products. It is found that the as-prepared Li-rich layered oxide microspheres exhibit high discharge capacity and superior rate performance: delivering an initial discharge capacity of 292 mAh g−1 at a current density of 20 mA g−1, 189 mAh g−1 at a current density of 600 mA g−1 and 142 mAh g−1 at a current density of 2000 mA g−1 (10C), which are better than that of the sample as-prepared by co-precipitation method. The high discharge capacity and improved rate-capability were beneficial from the microspheres assembled by uniform primary particles around 250 nm, more reversible redox and better electrode kinetics comparing to that of the co-precipitation sample. The preparation strategy reported here may offer hints for achieving various advanced Li-rich layered composite materials that would be used in high-performance energy storage.
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2.
  • Fu, Chaochao, et al. (författare)
  • Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications
  • 2015
  • Konferensbidrag (refereegranskat)abstract
    • There is a rising demand for low temperature polysilicon TFT these years due to the rapidly increasing market of high resolution display panels. In this paper, both low temperature microwave annealing and laser annealing were used to crystallize amorphous silicon film on glass substrate. It is found that both methods had successfully transferred the amorphous silicon into polysilicon according to Raman spectra results. The microwave crystallized polysilicon had smaller grain size and lower tensile stress than the laser crystallized one. After implantation and activation of BF2 and P, sheet resistance values of the BF2-implanted microwave crystallized samples were similar to that of laser crystallized ones. However, for the P implanted samples, the microwave crystallized samples had two to three magnitude higher sheet resistance compared with the laser crystallized ones.
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3.
  • Fu, Chaochao, et al. (författare)
  • Nickel-Rich Layered Microspheres Cathodes: Lithium/Nickel Disordering and Electrochemical Performance
  • 2014
  • Ingår i: ACS Applied Materials & Interfaces. - 1944-8252 .- 1944-8244. ; 6:18, s. 15822-15831
  • Tidskriftsartikel (refereegranskat)abstract
    • Nickel-rich layered metal oxide materials are prospective cathode materials for lithium ion batteries due to the relatively higher capacity and lower cost than LiCoO2. Nevertheless, the disordered arrangement of Li+/Ni2+ in local regions of these materials and its impact on electrochemistry performance are not well understood, especially for LiNi1–x–yCoxMnyO2 (1–x–y > 0.5) cathodes, which challenge one’s ability in finding more superior cathode materials for advanced lithium-ion batteries. In this work, Ni–Co–Mn-based spherical precursors were first obtained by a solvothermal method through handily utilizing the redox reaction of nitrate and ethanol. Subsequent sintering of the precursors with given amount of lithium source (Li-excess of 5, 10, and 15 mol %) yields LiNi0.7Co0.15Mn0.15O2 microspheres with different extents of Li+/Ni2+ disordering. With the determination of the amounts of Li+ ions in transition metal layer and Ni2+ ions in Li layer using structural refinement, the impact of Li+/Ni2+ ions disordering on the crystal structure, valence state of nickel ions, and electrochemical performance were investigated in detailed. It is clearly demonstrated that with increasing the amount of lithium source, lattice parameters (a and c) and interslab space thickness of unit cell decrease, and more Li+ ions incorporated into the 3a site of transition metal layer which leads to an increase of Ni3+ content in LiNi0.7Co0.15Mn0.15O2 as confirmed by X-ray photoelectron spectroscopy and a redox titration. Moreover, the electrochemical performance for as-prepared LiNi0.7Co0.15Mn0.15O2 microspheres exhibited a trend of deterioration due to the changes of crystal structure from Li+/Ni2+ mixing. The preparation method and the impacts of Li+/Ni2+ ions disordering reported herein for the nickel-rich layered LiNi0.7Co0.15Mn0.15O2 microspheres may provide hints for obtaining a broad class of nickel-rich layered metal oxide microspheres with superior electrochemical performance.
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4.
  • Fu, Chaochao, et al. (författare)
  • Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
  • 2016
  • Ingår i: Materials. - : MDPI AG. - 1996-1944. ; 9:5
  • Tidskriftsartikel (refereegranskat)abstract
    • The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.
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5.
  • Fu, Chaochao, et al. (författare)
  • Understanding the microwave annealing of silicon
  • 2017
  • Ingår i: AIP Advances. - : AMER INST PHYSICS. - 2158-3226. ; 7:3
  • Tidskriftsartikel (refereegranskat)abstract
    • Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.
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7.
  • Hu, Cheng, et al. (författare)
  • Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing
  • 2012
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:9, s. 092101-
  • Tidskriftsartikel (refereegranskat)abstract
    • Microwave annealing (MWA) is investigated as an alternative technique to rapid thermal processing with halogen lamp heating (RTP) for low-temperature silicide formation on epitaxially grown Si0.81Ge0.19 layers. Phase formation, resistivity mapping, morphology analysis, and composition evaluation indicate that the formation of low-resistivity NiSi1-xGex by means of MWA occurs at temperatures about 100 degrees C lower than by RTP. Under similar annealing conditions, more severe strain relaxation and defect generation are therefore found in the remaining Si0.81Ge0.19 layers treated by MWA. Although silicidation by microwave heating is in essence also due to thermal effects, details in heating mechanisms differ from RTP.
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8.
  • Li, Qi, 1990, et al. (författare)
  • A Study on Storage Characteristics of Pristine Li-rich Layered Oxide Li1.20Mn0.54Co0.13Ni0.13O2: Effect of Storage Temperature and Duration
  • 2015
  • Ingår i: Electrochimica Acta. - 0013-4686. ; 154, s. 249-158
  • Tidskriftsartikel (refereegranskat)abstract
    • Lithium-ion batteries always suffer from serious capability decay, especially when stored at high temperature and/or for prolonged duration. In this work, electrochemical performance for Li-rich layered oxides Li1.20Mn0.54Co0.13Ni0.13O2 was systematically investigated as a function of temperature and duration. Plenty of techniques like SEM, EDS, EIS, ARC, Raman, XRD, and XPS were utilized to characterize the structures, valence states, compositions, particle sizes, and morphologies of the layered oxides with varying temperature and duration. The results reveal that room temperature storage may alter surface kinetics, but hardly influence the electrochemical performance. While in the case of high temperature storage in pristine state, cycling stability is highly dependent on the storage duration. The degradation mechanism at high temperature storage with prolonged duration is demonstrated to be the accumulation of surface species like LiF/LixPFyOz initiated by the strong reactions between LiPF6 electrolyte and electrode. The results reported here may shed light on predicting electrochemical performance by surface analysis and also provide vital hints on enhancing the high-temperature storage stability of Li-rich layered oxides.
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9.
  • Li, Qi, 1990, et al. (författare)
  • Balancing stability and specific energy in Li-rich cathodes for lithium ion batteries: a case study of a novel Li–Mn–Ni–Co oxide
  • 2015
  • Ingår i: Journal of Materials Chemistry. - 1364-5501 .- 0959-9428. ; 3:19, s. 10592-10602
  • Tidskriftsartikel (refereegranskat)abstract
    • Lithium batteries for UPS, portable electronics and electrical vehicles rely on high-energy cathodes. Li-rich manganese-rich oxide (xLi2MnO3·(1 − x)LiMO2, M = transition metals) is one of the few materials that might meet such a requirement, but it suffers from poor energy retention due to serious voltage and/or capacity fade, which challenges its applications. Here we show that this challenge can be addressed by optimizing the interactions between the components Li2MnO3 and LiMO2 in the Li-rich oxide (i.e. stabilizing the layered structure through Li2MnO3 and controlling Li2MnO3 activation through LiMO2). To realize this synergistic effect, a novel Li2MnO3-stabilized Li1.080Mn0.503Ni0.387Co0.030O2 was designed and prepared using a hierarchical carbonate precursor obtained by a solvo/hydro-thermal method. This layered oxide is demonstrated to have a high working voltage of 3.9 V and large specific energy of 805 W h kg−1 at 29 °C as well as impressive energy retention of 92% over 100 cycles. Even when exposed to 55 °C, energy retention is still as high as 85% at 200 mA g−1. The attractive performance is most likely the consequence of the balanced stability and specific energy in the present material, which is promisingly applicable to other Li-rich oxide systems. This work sheds light on harnessing Li2MnO3 activation and furthermore efficient battery design simply through compositional tuning and temperature regulation.
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10.
  • Li, Qi, 1990, et al. (författare)
  • K+-Doped Li1.2Mn0.54Co0.13Ni0.13O2: A Novel Cathode Material with an Enhanced Cycling Stability for Lithium-Ion Batteries
  • 2014
  • Ingår i: ACS Applied Materials & Interfaces. - 1944-8252 .- 1944-8244. ; 6:13, s. 10330-10341
  • Tidskriftsartikel (refereegranskat)abstract
    • Li-rich layered oxides have attracted much attention for their potential application as cathode materials in lithium ion batteries, but still suffer from inferior cycling stability and fast voltage decay during cycling. How to eliminate the detrimental spinel growth is highly challenging in this regard. Herein, in situ K+-doped Li1.20Mn0.54Co0.13Ni0.13O2 was successfully prepared using a potassium containing α-MnO2 as the starting material. A systematic investigation demonstrates for the first time, that the in situ potassium doping stabilizes the host layered structure by prohibiting the formation of spinel structure during cycling. This is likely due to the fact that potassium ions in the lithium layer could weaken the formation of trivacancies in lithium layer and Mn migration to form spinel structure, and that the large ionic radius of potassium could possibly aggravate steric hindrance for spinel growth. Consequently, the obtained oxides exhibited a superior cycling stability with 85% of initial capacity (315 mA h g–1) even after 110 cycles. The results reported in this work are fundamentally important, which could provide a vital hint for inhibiting the undesired layered-spinel intergrowth with alkali ion doping and might be extended to other classes of layered oxides for excellent cycling performance.
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