| 1. |
- Thomas, HS, et al.
(författare)
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- 2019
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swepub:Mat__t
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| 2. |
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| 3. |
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| 4. |
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| 5. |
- Gaarder, A., et al.
(författare)
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Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP : Fe and GaAs : Fe
- 2002
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 17:2, s. 129-134
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Tidskriftsartikel (refereegranskat)abstract
- We apply time-resolved photoluminescence with 1-2 mum spatial resolution for the characterization of deep centre distributions in semi-insulating GaInP:Fe and GaAs:Fe epitaxial layers regrown by hydride vapour phase epitaxy around etched GaAs mesas and GaAs/AlGaAs quantum well laser structures. In InGaP, Fe ions act as the main carrier recombination centres, while in Fe-doped GaAs both the Fe ions and As antisite defects have to be considered. The distribution of Fe ions in InGaP was found to be rather uniform and close to the target value. For GaAs:Fe, the number of ionized Fe and EL2 centres showed a certain increase at the mesa interfaces. In both cases, the high trap concentration was maintained throughout the regrown layers indicating good semi-insulating material properties.
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| 6. |
- Gaarder, A., et al.
(författare)
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Time-resolved micro-photoluminescence studies of dopant distribution in selectively regrown GalnP : Fe around VCSELs
- 2002
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 89-91
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Tidskriftsartikel (refereegranskat)abstract
- We apply time-resolved photoluminescence with 1.5 mum spatial resolution for characterization ofcarrier trap distribution in semi-insulating Ga0.51In0.49P:Fe layers regrown around GaAs/AlGaAs circular vertical cavity surface emitting laser mesas using hydride vapour phase epitaxy. The carrier trapping times are in the range from 10 to 15 ps and quite uniformly distributed throughout the burying GaInP:Fe layer, suggesting that the layer is semi-insulating everywhere. Simulations show that, in addition to the Fe dopants, the layer contains other, unintended carrier traps. The photoluminescence spectra reveal that the regrown GaInP:Fe material has several distinct regions with different band gaps. This is attributed to differences in the In/Ga composition and/or CuPt ordering of the GaInP.
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| 7. |
- Martinez-Monleon, Angela, et al.
(författare)
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Amplification of CDK4 and MDM2: a detailed study of a high-risk neuroblastoma subgroup
- 2022
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- In neuroblastoma, MYCN amplification and 11q-deletion are important, although incomplete, markers of high-risk disease. It is therefore relevant to characterize additional alterations that can function as prognostic and/or predictive markers. Using SNP-microarrays, a group of neuroblastoma patients showing amplification of one or multiple 12q loci was identified. Two loci containing CDK4 and MDM2 were commonly co-amplified, although amplification of either locus in the absence of the other was observed. Pharmacological inhibition of CDK4/6 with ribociclib or abemaciclib decreased proliferation in a broad set of neuroblastoma cell lines, including CDK4/MDM2-amplified, whereas MDM2 inhibition by Nutlin-3a was only effective in p53(wild-type) cells. Combined CDK4/MDM2 targeting had an additive effect in p53(wild-type) cell lines, while no or negative additive effect was observed in p53(mutated) cells. Most 12q-amplified primary tumors were of abdominal origin, including those of intrarenal origin initially suspected of being Wilms' tumor. An atypical metastatic pattern was also observed with low degree of bone marrow involvement, favoring other sites such as the lungs. Here we present detailed biological data of an aggressive neuroblastoma subgroup hallmarked by 12q amplification and atypical clinical presentation for which our in vitro studies indicate that CDK4 and/or MDM2 inhibition also could be beneficial.
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| 9. |
- Carmody, C., et al.
(författare)
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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:22, s. 3913-3915
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Tidskriftsartikel (refereegranskat)abstract
- Undoped In0.53Ga0.47As epilayers were implanted with 2- MeV Fe+ ions at doses of 1x10(15) and 1x10(16) cm(-2) at room temperature and annealed at temperatures between 500 and 800 degreesC. Hall-effect measurements show that after annealing, layers with resistivities on the order of 10(5) Omega/square can be achieved. Carrier lifetimes as short as 300 fs are observed for samples annealed at 500 and 600 degreesC. For higher annealing temperatures, characteristic times of the optical response are on the order of a few picoseconds.
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| 10. |
- Carmody, C., et al.
(författare)
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Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 94:2, s. 1074-1078
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Tidskriftsartikel (refereegranskat)abstract
- MeV P+ implanted and annealed p-InP, and Fe+ implanted and annealed semi-insulating InP have both been shown to produce the high resistivity, good mobility, and ultrafast optical response desired for ultrafast photodetectors. Hall effect measurements and time resolved photoluminescence were used to analyze the electrical and optical features of such implanted materials. Low temperature annealing was found to yield the fastest response times-130 fs for Fe+ implanted and 400 fs for P+ implanted InP, as well as resistivities of the order similar to10(6) Omega/square. It was found that the electrical activation of Fe-related centers, useful for achieving high resistivities in Fe+ implanted semi-insulating InP, was not fully realized at the annealing temperatures chosen to produce the fastest optical response. Implanting p-InP in the dose regime where type conversion occurs, and subsequent annealing at 500degreesC, produces high resistivities and ultrafast carrier trapping times that are only marginally dose dependent.
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