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- Benisty, H., et al.
(författare)
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Low-loss photonic-crystal and monolithic InP integration : Bands, bends, lasers, filters
- 2004
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Ingår i: Photonic Crystal Materials and Devices II. - : SPIE - International Society for Optical Engineering. - 0819452688 ; , s. 119-128
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Konferensbidrag (refereegranskat)abstract
- Practical realizations of 2D (planar) photonics crystal (PhC) are either on a membrane or etched through a conventional heterostructure. While fascinating objects can emerge from the first approach, only the latter approach lends itself to a progressive integration of more compact PhC's towards monolithic PICs based on InP. We describe in this talk the various aspects from technology to functions and devices, as emerged from the European collaboration "PCIC". The main technology tour de force is deep-etching with aspect ratio of about 10 and vertical sidewall, achieved by three techniques (CAIBE, ICP-RIE, ECR-RIE). The basic functions explored are bends, splitters/combiners, mirrors, tapers, and the devices are filters and lasers. At the end of the talk, I will emphasize some positive aspects of "broad" multimode PhC waveguides, in view of compact add-drop filtering action, notably.
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| 2. |
- Streubel, K., et al.
(författare)
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Long wavelength vertical cavity lasers
- 1999
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - San Jose, CA, USA. ; 3625:Bellingham, WA, United States, s. 304-314
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Tidskriftsartikel (refereegranskat)abstract
- We report on three novel vertical cavity laser (VCL) structures for 1.55 Όm operation. Two of the VCL structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer-fusion or metamorphic epitaxial growth. The third VCL employs two wafer fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p-mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (CW) operation at room-temperature or above. The single fused VCL operates up to 17 °C and 101 °C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reversed biased tunnel junction for current injection. This laser achieves record high output power (1mW) at room temperature and operates CW up to 45 °C. The double fused VCLs with a 10×10 Όm2 active area operate CW up to 30 °C with threshold current as low as 2.5 mA and series resistance of 30 Ohms. The emission spectra exhibit a single lasing mode polarized with 30 dB extinction ratio and a spectral linewidth of 150 MHz.
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| 3. |
- Streubel, K., et al.
(författare)
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Novel technologies for 1.55-mu m vertical cavity lasers
- 2000
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Ingår i: Optical Engineering. - : SPIE-Intl Soc Optical Eng. - 0091-3286 .- 1560-2303. ; 39:2, s. 488-497
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Tidskriftsartikel (refereegranskat)abstract
- We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz.
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| 4. |
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