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Sökning: WFRF:(Genenko Y.A.)

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1.
  • Genenko, Y.A., et al. (författare)
  • Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields
  • 2012
  • Ingår i: Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, Aveiro;9 July 2012 through 13 July 2012. - 1099-4734. - 9781467326681 ; :Article number 6297727, s. 1-4
  • Konferensbidrag (refereegranskat)abstract
    • Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.
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2.
  • Genenko, Y.A., et al. (författare)
  • Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields
  • 2014
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:10
  • Tidskriftsartikel (refereegranskat)abstract
    • Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3V. (C) 2014 AIP Publishing LLC.
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  • Resultat 1-2 av 2
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konferensbidrag (1)
tidskriftsartikel (1)
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refereegranskat (2)
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Erhart, Paul, 1978 (2)
Hirsch, O (2)
Genenko, Y.A. (2)
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Chalmers tekniska högskola (2)
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Engelska (2)
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Naturvetenskap (2)

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