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- Georsson, K, et al.
(författare)
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Transmission electron microscopy of InP Stranski‐Krastanow islands buried in GaInP
- 1995
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Ingår i: Physica Status Solidi (A) Applied Research. - : Wiley. - 0031-8965. ; 150:1, s. 479-487
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- InP islands in a matrix of GaInP are investigated by transmission electron microscopy (TEM). The islands are uniform in size and shape, and are formed though self‐organized Stranski‐Krastanow growth. The introduction of a 4 ML intermediate GaP layer eliminates the bimodal distribution found in films where the InP was grown directly on the GaInP layer. The achieved island density is around 2 × 109 cm−2, and the basal plane of the InP islands is around 40 × 50 nm2. A model is suggested for the shape where the islands are in a truncated pyramidal form, showing {111}, {110}, and (001) facets, with an island height of 10 to 15 nm. A fast and simple specimen preparation method is suggested, based on laser assisted chemical etching.
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