| 1. |
- Aggerstam, Thomas, et al.
(författare)
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Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication
- 2001
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Ingår i: Proc. SPIE 4286, SPIE's Optoelectronics 2001, Photonics West, San Jose, US. - Bellingham, WA, ETATS-UNIS : Society of Photo-Optical Instrumentation Engineers. ; , s. 96-
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Konferensbidrag (refereegranskat)abstract
- MITEL Semiconductor is developing the next generation low cost, high performance transceivers for data communication. The increasing quantity of data being transferred over the Internet demands very high capacity interconnects. A low cost, high-performance alternative is the use of parallel fiber interconnects where the light is, for example, coupled into a 12-channel fiber-ribbon. Parallel interconnects require good uniformity in order to reduce escalating costs and complexity. In this paper we report on the static and the modulation properties of 850nm multimode oxide VCSELs for use in such Gb/s transceiver system. Static power-current-voltage characteristics with good uniformity were obtained for different structures, with threshold currents down to sub-mA. A maximum small signal 3-dB bandwidth of 10 GHz and a modulation current efficiency up to 8.4 GHz/√[mA] were measured. Single channel results are presented for VCSELs operated at data rates from 2.5-10Gb/s.
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| 2. |
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| 3. |
- Marcks von Würtemberg, Rickard, et al.
(författare)
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1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:21, s. 4851-4853
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Tidskriftsartikel (refereegranskat)abstract
- We report on the performance and analysis of 1.3 mum range InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.
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| 4. |
- Marcks von Würtemberg, Rickard, et al.
(författare)
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Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates
- 2004
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Ingår i: Proceedings of SPIE, the International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5443, s. 229-239
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Tidskriftsartikel (refereegranskat)abstract
- We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mW-range output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140degreesC. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 - 0.5 mW and 2.3 - 0.6 mA, respectively, over a temperature interval of 10 - 140degreesC. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.
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| 5. |
- Stevens, Renaud, 1972-, et al.
(författare)
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High-speed visible VCSEL for POF data links
- 2000
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Ingår i: Proc. SPIE 3946, SPIE’s Optoelectronics 2000, Photonics West, San Jose, US, January 2000.. - : SPIE. ; , s. 88-94
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Konferensbidrag (refereegranskat)abstract
- We report on two AlGaInP-based visible VCSEL designs based on different current confinement schemes, ion implantation and selective oxidation, and we compare the respective performances with a particular interest on the modulation properties. The implanted device operated continuous wave (CW) up to 40 degrees Celsius. Threshold current of 7 mA, threshold voltage of 2.5 V and maximum optical power of 0.3 mW were measured at room temperature. The small signal modulation responses were fitted using a 3-poles model, allowing the estimation of various parameters such as resonance frequency, damping factor and parasitic cut-off. The maximum 3dB- bandwidth was shown to be 2.1 GHz, limited both by thermal and parasitic effects. 'Error-free' transmission at 1 Gb/s was demonstrated through 50-meter of graded-index POF. The selectivity oxidized devices achieve much higher output power (1.8 mW for the 10 micrometer opening diameter) with threshold current as low a 1.5 mA and threshold voltage of 2.1 V at room temperature, and operate CW up to 49 degrees Celsius. The maximum 3 dB-bandwidth was 4.5 GHz. Modulation current efficiency factor up to 2.8 GHz/(root)[mA] was measured.
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| 6. |
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| 7. |
- Sundgren, Petrus, et al.
(författare)
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High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers
- 2003
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 39:15, s. 1128-1129
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Tidskriftsartikel (refereegranskat)abstract
- A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 mum singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90degreesC, while the peak output power only drops from 1 to 0.6 mW Large-area 1300 nm VCSELs show multimode output power close to 3 mW.
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