| 1. |
- Facio, Jorge, et al.
(författare)
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Engineering a pure Dirac regime in ZrTe5
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Ingår i: SciPost Physics. - 2542-4653.
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Real-world topological semimetals typically exhibit Dirac and Weyl nodes that coexist with trivial Fermi pockets. This tends to mask the physics of the relativistic quasiparticles. Using the example of ZrTe5, we show that strain provides a powerful tool for in-situ tuning of the band structure such that all trivial pockets are pushed far away from the Fermi energy, but only for a certain range of Van der Waals gaps. Our results naturally reconcile contradicting reports on the presence or absence of additional pockets in ZrTe5, and provide a clear map of where to find a pure three-dimensional Dirac semimetallic phase in the structural parameter space of the material.
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| 2. |
- Facio, Jorge I., et al.
(författare)
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Engineering a pure Dirac regime in ZrTe5
- 2023
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Ingår i: SciPost Physics. - : Stichting SciPost. - 2542-4653. ; 14:4
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Tidskriftsartikel (refereegranskat)abstract
- Real-world topological semimetals typically exhibit Dirac and Weyl nodes that coexist with trivial Fermi pockets. This tends to mask the physics of the relativistic quasiparti-cles. Using the example of ZrTe5, we show that strain provides a powerful tool for in-situ tuning of the band structure such that all trivial pockets are pushed far away from the Fermi energy, but only for a certain range of Van der Waals gaps. Our results naturally reconcile contradicting reports on the presence or absence of additional pockets in ZrTe5, and provide a clear map of where to find a pure three-dimensional Dirac semimetallic phase in the structural parameter space of the material.
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| 3. |
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| 4. |
- Gooth, Johannes, et al.
(författare)
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Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
- 2016
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Ingår i: ACS Nano. - Washington : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 10:7, s. 7180-7188
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Tidskriftsartikel (refereegranskat)abstract
- Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.
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| 5. |
- Gooth, Johannes, et al.
(författare)
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Thermoelectric performance of classical topological insulator nanowires
- 2015
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 30:1
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Tidskriftsartikel (refereegranskat)abstract
- There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the TE transport coefficients if the diameter is reduced into the sub 10 mu m range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum TE performance of TI nanowires and thus their application in efficient TE devices.
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| 6. |
- Gooth, Johannes, et al.
(författare)
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Transition to the quantum hall regime in InAs nanowire cross-junctions
- 2019
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 34
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Tidskriftsartikel (refereegranskat)abstract
- We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2/h)−1. e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase.
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| 7. |
- Li, Guowei, et al.
(författare)
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Dirac Nodal Arc Semimetal PtSn4: An Ideal Platform for Understanding Surface Properties and Catalysis for Hydrogen Evolution
- 2019
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Ingår i: Angewandte Chemie International Edition. - : WILEY-V C H VERLAG GMBH. - 1433-7851 .- 1521-3773.
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Tidskriftsartikel (refereegranskat)abstract
- Conductivity, carrier mobility, and a suitable Gibbs free energy are important criteria that determine the performance of catalysts for a hydrogen evolution reaction (HER). However, it is a challenge to combine these factors into a single compound. Herein, we discover a superior electrocatalyst for a HER in the recently identified Dirac nodal arc semimetal PtSn4. The determined turnover frequency (TOF) for each active site of PtSn4 is 1.54 H-2 s(-1) at 100 mV. This sets a benchmark for HER catalysis on Pt-based noble metals and earth-abundant metal catalysts. We make use of the robust surface states of PtSn4 as their electrons can be transferred to the adsorbed hydrogen atoms in the catalytic process more efficiently. In addition, PtSn4 displays excellent chemical and electrochemical stabilities after long-term exposure in air and long-time HER stability tests.
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| 8. |
- Li, Guowei, et al.
(författare)
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Synergistically creating sulfur vacancies in semimetal-supported amorphous MoS2 for efficient hydrogen evolution
- 2019
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Ingår i: Applied Catalysis B. - : Elsevier. - 0926-3373 .- 1873-3883. ; 254
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Tidskriftsartikel (refereegranskat)abstract
- The presence of elemental vacancies in materials are inevitable according to statistical thermodynamics, which will decide the chemical and physical properties of the investigated system. However, the controlled manipulation of vacancies for specific applications is a challenge. Here we report a facile method for creating large concentrations of S vacancies in the inert basal plane of MoS2 supported on semimetal CoMoP2. With a small applied potential, S atoms can be removed in the form of H2S due to the optimized free energy of formation. The existence of vacancies favors electron injection from the electrode to the active site by decreasing the contact resistance. As a consequence, the catalytic current is increased by 221% with the vacancy-rich MoS2 as electrocatalyst for hydrogen evolution reaction (HER). A small overpotential of 75 mV is needed to deliver a current density of 10 mA cm(-2), which is considered among the best values achieved for MoS2. It is envisaged that this work may provide a new strategy for utilizing the semimetal phase for structuring MoS2 into a multi-functional material.
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| 9. |
- Wu, Phillip, et al.
(författare)
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Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires.
- 2013
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:9, s. 4080-4086
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Tidskriftsartikel (refereegranskat)abstract
- We report the observation of a thermoelectric power factor in InAs nanowires that exceeds that predicted by a single-band bulk model by up to an order of magnitude at temperatures below about 20 K. We attribute this enhancement effect not to the long-predicted 1D subband effects but to quantum-dot-like states that form in electrostatically nonuniform nanowires as a result of interference between propagating states and 0D resonances.
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