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Sökning: WFRF:(Grammatikopoulos S.)

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  • Pappas, S. D., et al. (författare)
  • A Cost-Effective Growth of SiOx Thin Films by Reactive Sputtering : Photoluminescence Tuning
  • 2011
  • Ingår i: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 11:4, s. 3684-3687
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a new cost-effective method to produce substoichiometric SiO2 thin films by means of a simple sputter-coater operated at a base pressure of 1 x 10(-3) mbar. During sputtering air is introduced through a fine valve so that the sputtering gas is a mixture of air/Ar. High-resolution electron microscopy shows the formation of amorphous SiOx thin films for the as-deposited samples. The index x approaches 1 when the ratio of the partial pressure of air/Ar tends to 0.1. On the other hand, pure silica is formed when the ratio of the partial pressure of air/Ar approaches 0.5. The films in the as-deposited state show intense green yellow photoluminescence. This fades away with short annealing under air at 950 degrees C. If on the other hand, prolonged annealing is performed under Argon atmosphere at 1000 degrees C, red-infrared photoluminescence is recorded due to the formation of Si nanocrystals embedded in SiO2. This simple method could be suitable for the production of thin SiOx films with embedded nanocrystals for optoelectronic or photovoltaic applications.
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  • Pappas, S. D., et al. (författare)
  • Growth and Experimental Evidence of Quantum Confinement Effects in Cu(2)O and CuO Thin Films
  • 2011
  • Ingår i: Journal of Nano Research. - 1662-5250. ; 15, s. 69-74
  • Tidskriftsartikel (refereegranskat)abstract
    • Thin Cu films of thickness 0.4 - 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230 degrees C and 425 degrees C in order to produce single-phase Cu(2)O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet - visible spectrophotometer. From the absorption spectra of the films, it was found that the gap E(B) for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu(2)O thinnest film (0.75 nm), whereas the E(direct) for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 mm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.
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  • Resultat 1-9 av 9

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