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- Coll, M., et al.
(författare)
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Towards Oxide Electronics: a Roadmap
- 2019
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 482, s. 1-93
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Tidskriftsartikel (refereegranskat)abstract
- At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
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- Sorar, Idris, et al.
(författare)
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Electrochromism in Ni Oxide Thin Films Made by Advanced Gas Deposition and Sputtering : A Comparative Study Demonstrating the Significance of Surface Effects
- 2020
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 167:11
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Tidskriftsartikel (refereegranskat)abstract
- Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactive advanced gas deposition (AGD) and, for comparison, also by reactive DC magnetron sputtering (MS). Voltammetric cycling was performed in an electrolyte of lithium perchlorate in propylene carbonate in the voltage range 2.0–4.1 V vs Li/Li+, and concurrent optical transmittance modulation was studied at a wavelength of 530 nm. For the thickest films, the optical modulation range was as large as ∼54% and the maximum transmittance was ∼82% for deposition by AGD, whereas the corresponding numbers were ∼45% and ∼87% for MS. Rutherford backscattering spectrometry together with measurements of film thickness demonstrated that the porosity of 400–500-nm-thick films made by AGD and MS were ∼84% and ∼45%, respectively. The charge exchange per mass unit was as high as 48–67 C g–1 for samples made by AGD. The corresponding number was much lower for MS, namely 13–18 C g–1. These results lend convincing support to the view that the electrochromism of Ni-oxide-based films in Li-ion-conducting electrolytes is dominated by surface effects.
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| 9. |
- Aijaz, Asim, et al.
(författare)
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Low-temperature synthesis of thermochromic vanadium dioxide thin films by reactive high power impulse magnetron sputtering
- 2016
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Ingår i: Solar Energy Materials and Solar Cells. - : Elsevier BV. - 0927-0248 .- 1879-3398. ; 149, s. 137-144
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Tidskriftsartikel (refereegranskat)abstract
- Thermochromic (TC) vanadium dioxide thin films provide means for controlling solar energy throughput and can be used for energy-saving applications such as smart windows. One of the factors limiting the deployment of VO2 films in TC devices is the growth temperature tau(s). At present, temperatures in excess of 450 degrees C are required, which clearly can be an impediment especially for temperature-sensitive substrates. Here we address the issue of high tau(s) by synthesizing VO2 thin films from highly ionized fluxes of depositing species generated in high power impulse magnetron sputtering (HiPIMS) discharges. The use of ions facilitates low-temperature film growth because the energy of the depositing species can be readily manipulated by substrate bias. For comparison, films were also synthesized by pulsed direct current magnetron sputtering. Structural and optical characterization of VO2 thin films on ITO-coated glass substrates confirms previous results that HiPIMS allows tau(s) to be reduced from 500 to 300 degrees C. Importantly, we demonstrated that HiPIMS permits the composition and TC response of the films to be tuned by altering the energy of the deposition flux via substrate bias. An optimum ion energy of 100 eV was identified, which points at a potential for further reduction of tau(s) thereby opening new possibilities for industrially-relevant applications of VO2-based TC thin films. Weak TC activity was observed even at tau(s) approximate to 200 degrees C in HiPIMS-produced films.
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