| 1. |
- Ahvenniemi, Esko, et al.
(författare)
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Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"
- 2017
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 35:1
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Forskningsöversikt (refereegranskat)abstract
- Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
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| 2. |
- Kosen, Sandoko, 1991, et al.
(författare)
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Building blocks of a flip-chip integrated superconducting quantum processor
- 2022
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Ingår i: Quantum Science and Technology. - : IOP Publishing. - 2058-9565. ; 7:3
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Tidskriftsartikel (refereegranskat)abstract
- We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips-one quantum chip and one control chip-that are bump-bonded together. We demonstrate time-averaged coherence times exceeding 90 mu s, single-qubit gate fidelities exceeding 99.9%, and two-qubit gate fidelities above 98.6%. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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| 3. |
- Li, Hangxi, 1994, et al.
(författare)
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Experimentally Verified, Fast Analytic, and Numerical Design of Superconducting Resonators in Flip-Chip Architectures
- 2023
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Ingår i: IEEE Transactions on Quantum Engineering. ; 4
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Tidskriftsartikel (refereegranskat)abstract
- In superconducting quantum processors, the predictability of device parameters is of increasing importance as many laboratories scale up their systems to larger sizes in a 3-D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here, we present a method, based on conformal mapping techniques, to predict a resonator's parameters directly from its 2-D cross-section, without computationally heavy and time-consuming 3-D simulation. We demonstrate the method's validity by comparing the calculated resonator frequency and coupling quality factor with those obtained through 3-D finite-element-method simulation and by measurement of 15 resonators in a flip-chip-integrated architecture. We achieve a discrepancy of less than 2% between designed and measured frequencies for 6-GHz resonators. We also propose a design method that reduces the sensitivity of the resonant frequency to variations in the interchip spacing.
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| 4. |
- Liu, Zhengjun, et al.
(författare)
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Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching
- 2013
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 24:17, s. 175304-
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Tidskriftsartikel (refereegranskat)abstract
- A novel aluminum oxide (Al2O3) hard mask fabrication process with nanoscale resolution is introduced. The Al2O3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al2O3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga+) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al2O3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga+ FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al2O3 mask protects the underlying silicon from Ga+ ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 mu m. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated.
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