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- Bi, Zhaoxia, et al.
(författare)
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InN quantum dots on GaN nanowires grown by MOVPE
- 2014
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Ingår i: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
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Tidskriftsartikel (refereegranskat)abstract
- In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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| 3. |
- Bi, Zhaoxia, et al.
(författare)
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Self-assembled InN quantum dots on side facets of GaN nanowires
- 2018
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:16
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (...ABABCBC...) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.
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| 6. |
- Jansson, Jonas
(författare)
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Collision Avoidance Theory : with Application to Automotive Collision Mitigation
- 2005
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Avoiding collisions is a crucial issue in most transportation systems as well as in many other applications. The task of a collision avoidance system is to track objects of potential collision risk and determine any action to avoid or mitigate a collision. This thesis presents theory for tracking and decision making in collision avoidance systems. The main focus is how to make decisions based on uncertain estimates and in the presence of multiple obstacles. A general framework for dealing with nonlinear dynamic systems and arbitrary noise distributions in collision avoidance decision making is proposed. Some novel decision functions are also suggested. Furthermore, performance evaluations using simulated and experimental data are presented. Most examples in this thesis are from automotive applications.A driving application for the work presented in this thesis is an automotive emergency braking system. This system is called a collision mitigation by braking (CMbB) system. It aims at mitigating the consequences of an accident by applying the brakes once a collision becomes unavoidable. A CMbB system providing a maximum collision speed reduction of 15 km/h and an average speed reduction of 7.5 km/h is estimated to reduce all injuries, classified as anything between moderate and fatal, for rear-end collisions by 16%. Since rear-end collision correspond to approximately 30% of all accidents this corresponds to a 5% reduction for all accidents.The evaluation includes results from simulations as well as two demonstrator vehicles, with different sensor setups and different decision logic, that perform autonomous emergency braking.
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| 7. |
- Khalilian, Maryam, et al.
(författare)
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Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications
- 2020
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Ingår i: Small. - : Wiley-VCH Verlag. - 1613-6810 .- 1613-6829. ; 16:30
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Tidskriftsartikel (refereegranskat)abstract
- III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substrate leading to high dislocation densities. In order to overcome the issue, efforts have gone into selected area growth of nanowires (NWs), using their small footprint in the substrate to grow virtually dislocation-free material. Their geometry is defined by six tall side-facets and a pointed tip which limits the design of optoelectronic devices. Growth of dislocation-free and atomically smooth 3D hexagonal GaN micro-prisms with a flat, micrometer-sized top-surface is presented. These self-forming structures are suitable for optical devices such as low-loss optical cavities for high-efficiency LEDs. The structures are made by annealing GaN NWs with a thick radial shell, reforming them into hexagonal flat-top prisms with six equivalents either m- or s-facets depending on the initial heights of the top pyramid and m-facets of the NWs. This shape is kinetically controlled and the reformation can be explained with a phenomenological model based on Wulff construction that have been developed. It is expected that the results will inspire further research into micron-sized III-nitride-based devices. © 2020 The Authors.
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| 10. |
- Rönnberg, Bengt, et al.
(författare)
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Compensating for cross-reactions using avidity and computation in a suspension multiplex immunoassay for serotyping of Zika versus other flavivirus infections
- 2017
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Ingår i: Medical Microbiology and Immmunology. - : SPRINGER. - 0300-8584 .- 1432-1831. ; 206:5, s. 383-401
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Tidskriftsartikel (refereegranskat)abstract
- The recent spread of Zika virus (ZIKV) in the Americas and Asia necessitates an increased preparedness for improved maternal and perinatal health and blood safety. However, serological cross-reactions, especially to Dengue virus (DENV), complicate ZIKV antibody serodiagnosis. A novel "pan-Flavi" suspension multiplex immunoassay (PFSMIA) using 25 antigens, whole virus (WV), non-structural protein 1 (NS1), and envelope (E) proteins, from 7 zoonotic flaviviruses for specific detection of ZIKV and DENV IgM and IgG was developed. Patterns of antibody cross-reactivity, avidity, and kinetics were established in 104 sera from returning travelers with known ZIKV and DENV infections. PFSMIA gave IgM- and IgG-sensitivities for both viruses of 96-100%, compared to an immunofluorescence assay. Main IgM cross-reactions were to NS1, for IgG to the E and WV antigens. Infecting virus yielded reactivity to several antigens of the homologous virus, while cross-reactions tended to occur only to a single antigen from heterologous virus(es). A specificity-enhancing computer procedure took into account antibody isotype, number of antibody-reactive antigens per virus, avidity, average degree of cross-reactivity to heterologous flavivirus antigens, and reactivity changes in serial sera. It classified all 50 cases correctly. Applied to sera from 200 pregnant women and 173 blood donors from Sweden, one blood donor was found ZIKV NS1 IgM positive, and another as ZIKV NS1 IgG positive. These samples did not react with other ZIKV antigens and were thereby judged as false-positives. PFSMIA provided sensitive and specific ZIKV and DENV serology, warranting high-throughput serological surveillance and a minimized need for laborious and expensive virus neutralization assays.
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