| 1. |
- Abasahl, B., et al.
(författare)
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Towards Low-Power Reconfigurable Photonic ICs Based on MEMS Technology
- 2018
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- With the progress and industrialization of photonic integrated circuits (PIC) in the past few decades, there is a strong urge towards design and prototyping in a fast, low-cost and reliable manner. In electronics, this demand is met through field programmable gate arrays (FPGA). In the Horizon 2020 MORPHIC (MEMS-based zerO-power Reconfigurable Photonic ICs) project, we are developing a reconfigurable PIC platform to address this demand in the field of photonics and to facilitate the path from idea towards realization for PIC designers and manufacturers.
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| 2. |
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| 3. |
- Agustsson, J. S., et al.
(författare)
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Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO(2)
- 2008
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Ingår i: Journal of Physics Conference Series. - : IOP Science. - 1742-6596.
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Konferensbidrag (refereegranskat)abstract
- Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).
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| 4. |
- Agustsson, J. S., et al.
(författare)
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Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
- 2008
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:22, s. 7356-7360
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Tidskriftsartikel (refereegranskat)abstract
- Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 degrees C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 degrees C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.
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| 5. |
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| 6. |
- Arnalds, U. B., et al.
(författare)
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A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements
- 2007
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 78:10, s. 103901-
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Tidskriftsartikel (refereegranskat)abstract
- We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.
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| 7. |
- Fischer, Andreas C., 1982-, et al.
(författare)
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3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching
- 2012
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Ingår i: Advanced Functional Materials. - : Wiley-VCH Verlagsgesellschaft. - 1616-301X .- 1616-3028. ; 22:19, s. 4004-4008
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Tidskriftsartikel (refereegranskat)abstract
- A method for additive layer-by-layer fabrication of arbitrarily shaped 3D silicon micro- and nanostructures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The method is demonstrated by fabricating 3D structures made of two and three silicon layers, including suspended beams that are 40 nm thick, 500 nm wide, and 4 μm long, and patterned lines that are 33 nm wide.
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| 8. |
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| 9. |
- Fischer, Andreas C., et al.
(författare)
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Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching
- 2012
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Ingår i: 12th IEEE Conference on Nanotechnology (IEEE-NANO), 2012. - : IEEE conference proceedings. - 9781467321983 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- In this paper we report a method for layer-by-layer printing of three-dimensional (3D) silicon (Si) micro- and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga+) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.
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| 10. |
- Gylfason, Kristinn B., 1978-, et al.
(författare)
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Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching
- 2012
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 30:6, s. 06FF05-
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Tidskriftsartikel (refereegranskat)abstract
- The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro- and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity.
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